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BSC900N20NS3 G

BSC900N20NS3 G
Mfr. #:
BSC900N20NS3 G
Hersteller:
Infineon Technologies
Beschreibung:
Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP (Alt: BSC900N20NS3 G)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC900N20NS3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
BSC900N20NS3GATMA1 BSC900N20NS3GXT SP000781780
Montageart
SMD/SMT
Paket-Koffer
TDSON-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
62.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
15.2 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Rds-On-Drain-Source-Widerstand
77 mOhms
Transistor-Polarität
N-Kanal
Vorwärts-Transkonduktanz-Min
16 S 8 S
Tags
BSC90, BSC9, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSC900N20NS3GATMA1
DISTI # BSC900N20NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.7505
BSC900N20NS3GATMA1
DISTI # BSC900N20NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8622
  • 500:$1.0405
  • 100:$1.3378
  • 10:$1.6650
  • 1:$1.8400
BSC900N20NS3GATMA1
DISTI # BSC900N20NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8622
  • 500:$1.0405
  • 100:$1.3378
  • 10:$1.6650
  • 1:$1.8400
BSC900N20NS3 G
DISTI # BSC900N20NS3 G		Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP (Alt: BSC900N20NS3 G)
RoHS: Compliant
Min Qty: 5000		Asia - 0
    BSC900N20NS3GATMA1
    DISTI # BSC900N20NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC900N20NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.7559
    • 10000:$0.7279
    • 20000:$0.7019
    • 30000:$0.6779
    • 50000:$0.6659
    BSC900N20NS3GATMA1
    DISTI # 85X4155    		Infineon Technologies AGMOSFET, N-CH, 200V, 15.2A, 62.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:15.2A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$1.5500
    • 10:$1.3200
    • 25:$1.2300
    • 50:$1.1400
    • 100:$1.0500
    • 250:$0.9850
    • 500:$0.9190
    • 1000:$0.7610
    BSC900N20NS3 G
    DISTI # 726-BSC900N20NS3G    		Infineon Technologies AGMOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
    RoHS: Compliant    		2956
    • 1:$1.5500
    • 10:$1.3200
    • 100:$1.0500
    • 500:$0.9190
    • 1000:$0.7610
    • 2500:$0.7090
    • 5000:$0.6830
    BSC900N20NS3GATMA1
    DISTI # 9064400    		Infineon Technologies AGMOSFET N-CH200V 15.2A OPTIMOS TDSON8 EP, PK1000
    • 10:£1.0920
    • 50:£0.9610
    • 250:£0.7530
    • 500:£0.6620
    • 1250:£0.5430
    BSC900N20NS3GATMA1
    DISTI # 9064400P    		Infineon Technologies AGMOSFET N-CH200V 15.2A OPTIMOS TDSON8 EP, RL5650
    • 50:£0.9610
    • 250:£0.7530
    • 500:£0.6620
    • 1250:£0.5430
    BSC900N20NS3GATMA1
    DISTI # 2443372RL    		Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TDSON-8
    RoHS: Compliant    		0
    • 1:$2.4600
    • 10:$2.0900
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.2100
    • 2500:$1.1300
    • 5000:$1.0900
    BSC900N20NS3GATMA1
    DISTI # 2443372    		Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TDSON-8
    RoHS: Compliant    		0
    • 1:$2.4600
    • 10:$2.0900
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.2100
    • 2500:$1.1300
    • 5000:$1.0900
    BSC900N20NS3GATMA1
    DISTI # 2443372    		Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TDSON-8
    RoHS: Compliant    		0
    • 5:£1.1000
    • 25:£0.9710
    • 100:£0.8030
    • 250:£0.7610
    • 500:£0.6690
    Bild Teil # Beschreibung
    BSC900N20NS3 G

    Mfr.#: BSC900N20NS3 G

    OMO.#: OMO-BSC900N20NS3-G

    		 MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
    BSC900N20NS3GATMA1

    Mfr.#: BSC900N20NS3GATMA1

    OMO.#: OMO-BSC900N20NS3GATMA1

    		 MOSFET MV POWER MOS
    BSC900N20NS3 G

    Mfr.#: BSC900N20NS3 G

    OMO.#: OMO-BSC900N20NS3-G-1190

    		 Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP (Alt: BSC900N20NS3 G)
    BSC900N20NS3GATMA1

    Mfr.#: BSC900N20NS3GATMA1

    OMO.#: OMO-BSC900N20NS3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 15.2A 8TDSON
    BSC900N20NS3G

    Mfr.#: BSC900N20NS3G

    OMO.#: OMO-BSC900N20NS3G-126

    		 IGBT Transistors MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von BSC900N20NS3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,02 $
    1,02 $
    10
    0,97 $
    9,73 $
    100
    0,92 $
    92,21 $
    500
    0,87 $
    435,40 $
    1000
    0,82 $
    819,60 $
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