BSC90

BSC900N20NS3 G vs BSC900N20NS3GATMA1 vs BSC900N20NS3G

 
PartNumberBSC900N20NS3 GBSC900N20NS3GATMA1BSC900N20NS3G
DescriptionMOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3MOSFET MV POWER MOSIGBT Transistors MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TDSON-8TDSON-8-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current15.2 A--
Rds On Drain Source Resistance90 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation62.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
Transistor Type1 N-Channel--
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min8 S--
Fall Time3 ns--
Product TypeMOSFETMOSFET-
Rise Time4 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesBSC900N20NS3GATMA1 BSC9N2NS3GXT SP000781780BSC900N20NS3 BSC9N2NS3GXT G SP000781780-
Unit Weight0.003527 oz--
Tradename-OptiMOS-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSC900N20NS3 G MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
BSC900N20NS3GATMA1 MOSFET N-CH 200V 15.2A 8TDSON
Infineon Technologies
Infineon Technologies
BSC900N20NS3GATMA1 MOSFET MV POWER MOS
BSC900N20NS3 G Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP (Alt: BSC900N20NS3 G)
BSC900N20NS3G IGBT Transistors MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
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