PartNumber | BSC900N20NS3 G | BSC900N20NS3GATMA1 | BSC900N20NS3G |
Description | MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 | MOSFET MV POWER MOS | IGBT Transistors MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-TDSON-8 | TDSON-8 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 15.2 A | - | - |
Rds On Drain Source Resistance | 90 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 9 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 62.5 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Transistor Type | 1 N-Channel | - | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 8 S | - | - |
Fall Time | 3 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 4 ns | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 10 ns | - | - |
Typical Turn On Delay Time | 5 ns | - | - |
Part # Aliases | BSC900N20NS3GATMA1 BSC9N2NS3GXT SP000781780 | BSC900N20NS3 BSC9N2NS3GXT G SP000781780 | - |
Unit Weight | 0.003527 oz | - | - |
Tradename | - | OptiMOS | - |