UJ3D1210TS

UJ3D1210TS
Mfr. #:
UJ3D1210TS
Hersteller:
UnitedSiC
Beschreibung:
Schottky Diodes & Rectifiers 1200V/10A SiC SCHOTTKY DIODE G3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
UJ3D1210TS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
UJ3D1210TS Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
UnitedSiC
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-2
Wenn - Vorwärtsstrom:
10 A
Vrrm - Repetitive Sperrspannung:
1200 V
Vf - Durchlassspannung:
1.4 V
Ifsm - Vorwärtsstoßstrom:
120 A
Aufbau:
Single
Technologie:
SiC
Ir - Gegenstrom:
100 uA
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
UJ3D
Qualifikation:
AEC-Q101
Verpackung:
Rohr
Marke:
UnitedSiC
Pd - Verlustleistung:
220.6 W
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
50
Unterkategorie:
Dioden & Gleichrichter
Vr - Sperrspannung:
1200 V
Tags
UJ3D121, UJ3D1, UJ3D, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
UJ3D Series 650V & 1200V SiC Schottky Diodes
UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).  With zero reverse recovery charge and a high maximum junction temperature of 175°C, these devices are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 
Bild Teil # Beschreibung
LSIC1MO170E1000

Mfr.#: LSIC1MO170E1000

OMO.#: OMO-LSIC1MO170E1000

MOSFET 1700V 1000mOhm SiC MOSFET
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160

MOSFET 1200 V 160 mOhm SiC Mosfet
LSIC1MO120E0120

Mfr.#: LSIC1MO120E0120

OMO.#: OMO-LSIC1MO120E0120

MOSFET 1200 V 120 mOhm SiC Mosfet
STPSC10H12D

Mfr.#: STPSC10H12D

OMO.#: OMO-STPSC10H12D

Schottky Diodes & Rectifiers 1200V Power Schottky Silicon Carbide diode
MSC010SDA120K

Mfr.#: MSC010SDA120K

OMO.#: OMO-MSC010SDA120K

Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
C2M1000170J

Mfr.#: C2M1000170J

OMO.#: OMO-C2M1000170J

MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
LSIC1MO120E0080

Mfr.#: LSIC1MO120E0080

OMO.#: OMO-LSIC1MO120E0080

MOSFET 1200V 80mOhm SiC MOSFET
LSIC1MO120E0120

Mfr.#: LSIC1MO120E0120

OMO.#: OMO-LSIC1MO120E0120-LITTELFUSE

1200V/120mohm SiC MOSFET TO-247-3L
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160-LITTELFUSE

1200V/160mohm SiC MOSFET TO-247-3L
LSIC1MO170E1000

Mfr.#: LSIC1MO170E1000

OMO.#: OMO-LSIC1MO170E1000-LITTELFUSE

1700V/1000mohm SiC MOSFET TO-247-3L
Verfügbarkeit
Aktie:
32
Auf Bestellung:
2015
Menge eingeben:
Der aktuelle Preis von UJ3D1210TS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,71 $
10,71 $
10
10,13 $
101,30 $
25
9,23 $
230,75 $
50
8,60 $
430,00 $
100
8,33 $
833,00 $
250
7,66 $
1 915,00 $
500
6,98 $
3 490,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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