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IPD26N06S2L35ATMA2

IPD26N06S2L35ATMA2
Mfr. #:
IPD26N06S2L35ATMA2
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CHANNEL_55/60V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD26N06S2L35ATMA2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD26N06S2L35ATMA2 DatasheetIPD26N06S2L35ATMA2 Datasheet (P4-P6)IPD26N06S2L35ATMA2 Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
27 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
24 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
68 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
11 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
26 ns
Typische Einschaltverzögerungszeit:
5 ns
Teil # Aliase:
IPD26N06S2L-35 SP001063630
Gewichtseinheit:
0.139332 oz
Tags
IPD26N06S2L3, IPD26N, IPD26, IPD2, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 55 V 35 mOhm OptiMOS® Power-Transistor - PG-TO252-3-11
***ical
Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 55V 30A TO252-3
***ronik
N-CH 55V 30A 35mOhm TO252
***ark
Mosfet, Aec-Q101, N-Ch, 55V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:68W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 55V, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:55V; Resistenza di Attivazione Rds(on):0.027ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:68W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Teil # Mfg. Beschreibung Aktie Preis
IPD26N06S2L35ATMA2
DISTI # V72:2272_06391037		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R2030
  • 1000:$0.2814
  • 500:$0.3025
  • 250:$0.3361
  • 100:$0.3734
  • 25:$0.5571
  • 10:$0.6275
  • 1:$0.7607
IPD26N06S2L35ATMA2
DISTI # V36:1790_06391037		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R0
    IPD26N06S2L35ATMA2
    DISTI # IPD26N06S2L35ATMA2CT-ND    		Infineon Technologies AGMOSFET N-CH 55V 30A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2297In Stock
    • 1000:$0.3241
    • 500:$0.4051
    • 100:$0.5125
    • 10:$0.6680
    • 1:$0.7600
    IPD26N06S2L35ATMA2
    DISTI # IPD26N06S2L35ATMA2DKR-ND    		Infineon Technologies AGMOSFET N-CH 55V 30A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2297In Stock
    • 1000:$0.3241
    • 500:$0.4051
    • 100:$0.5125
    • 10:$0.6680
    • 1:$0.7600
    IPD26N06S2L35ATMA2
    DISTI # IPD26N06S2L35ATMA2TR-ND    		Infineon Technologies AGMOSFET N-CH 55V 30A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 25000:$0.2491
    • 12500:$0.2557
    • 5000:$0.2655
    • 2500:$0.2852
    IPD26N06S2L35ATMA2
    DISTI # 30285979    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R2030
    • 27:$0.7607
    IPD26N06S2L35ATMA2
    DISTI # SP001063630    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R (Alt: SP001063630)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 12500
    • 25000:€0.3189
    • 15000:€0.3439
    • 10000:€0.3719
    • 5000:€0.4059
    • 2500:€0.4969
    IPD26N06S2L35ATMA2
    DISTI # IPD26N06S2L35ATMA2    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Bulk (Alt: IPD26N06S2L35ATMA2)
    RoHS: Compliant
    Min Qty: 1471
    Container: Bulk    		Americas - 0
    • 14710:$0.2159
    • 7355:$0.2189
    • 4413:$0.2269
    • 2942:$0.2359
    • 1471:$0.2439
    IPD26N06S2L35ATMA2
    DISTI # IPD26N06S2L35ATMA2    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD26N06S2L35ATMA2)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.3339
    • 15000:$0.3399
    • 10000:$0.3519
    • 5000:$0.3649
    • 2500:$0.3789
    IPD26N06S2L35ATMA2
    DISTI # 34AC1668    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes5686
    • 1000:$0.3030
    • 500:$0.3280
    • 250:$0.3540
    • 100:$0.3790
    • 50:$0.4480
    • 25:$0.5170
    • 10:$0.5870
    • 1:$0.7070
    IPD26N06S2L35ATMA2
    DISTI # 726-IPD26N06S2L35ATM    		Infineon Technologies AGMOSFET N-CHANNEL_55/60V
    RoHS: Compliant    		4900
    • 1:$0.7000
    • 10:$0.5810
    • 100:$0.3750
    • 1000:$0.3000
    • 2500:$0.2530
    IPD26N06S2L35ATMA2Infineon Technologies AGPower Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
    RoHS: Compliant    		405000
    • 1000:$0.2200
    • 500:$0.2400
    • 100:$0.2500
    • 25:$0.2600
    • 1:$0.2800
    IPD26N06S2L35ATMA2
    DISTI # 2781080    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-2525726
    • 500:£0.2240
    • 250:£0.2550
    • 100:£0.2860
    • 10:£0.4900
    • 1:£0.6110
    IPD26N06S2L35ATMA2
    DISTI # 2781080    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252
    RoHS: Compliant    		5641
    • 5000:$0.3860
    • 1000:$0.4070
    • 500:$0.4310
    • 250:$0.4970
    • 100:$0.5890
    • 25:$0.7210
    • 5:$0.8280
    IPD26N06S2L35ATMA2
    DISTI # XSKDRABV0048049    		Infineon Technologies AGSmallSignalBipolarTransistor,0.3AI(C),140VV(BR)CEO,1-Element,NPN,Silicon
    RoHS: Compliant    		10000 in Stock0 on Order
    • 10000:$0.4707
    • 2500:$0.5043
    Bild Teil # Beschreibung
    IR2181STRPBF

    Mfr.#: IR2181STRPBF

    OMO.#: OMO-IR2181STRPBF

    		 Gate Drivers Hi&Lw Sd Drvr Soft Trn On Non Invrt
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    OMO.#: OMO-FAN3227TMX

    		 Gate Drivers dual 2A with non-inverting TTL
    VND5N07-E

    Mfr.#: VND5N07-E

    OMO.#: OMO-VND5N07-E

    		 MOSFET N-Ch 70V 5A OmniFET
    IPB014N06N

    Mfr.#: IPB014N06N

    OMO.#: OMO-IPB014N06N

    		 MOSFET N-Ch 60V 180A D2PAK-6
    LM317D2T-TR

    Mfr.#: LM317D2T-TR

    OMO.#: OMO-LM317D2T-TR

    		 Linear Voltage Regulators 1.2-37V Adj Positive
    KF33BDT-TR

    Mfr.#: KF33BDT-TR

    OMO.#: OMO-KF33BDT-TR

    		 LDO Voltage Regulators 3.3V 0.5A Positive
    TLC555CDR

    Mfr.#: TLC555CDR

    OMO.#: OMO-TLC555CDR

    		 Timers & Support Products CMOS
    SRN8040TA-220M

    Mfr.#: SRN8040TA-220M

    OMO.#: OMO-SRN8040TA-220M-BOURNS

    		 Inductor Power Semi-Shielded Wirewound 22uH 20% 1MHz 12Q-Factor Ferrite 2.9A 73mOhm DCR 3131 Automotive T/R
    IR2181STRPBF

    Mfr.#: IR2181STRPBF

    OMO.#: OMO-IR2181STRPBF-INFINEON-TECHNOLOGIES

    		 Gate Drivers Hi&Lw Sd Drvr Soft Trn On Non Invrt
    VND5N07-E

    Mfr.#: VND5N07-E

    OMO.#: OMO-VND5N07-E-STMICROELECTRONICS

    		 MOSFET N-CH 70V 5A TO252
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von IPD26N06S2L35ATMA2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,70 $
    0,70 $
    10
    0,58 $
    5,81 $
    100
    0,38 $
    37,50 $
    1000
    0,30 $
    300,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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