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IPL60R125P7AUMA1

IPL60R125P7AUMA1
Mfr. #:
IPL60R125P7AUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPL60R125P7AUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPL60R125P7AUMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
VSON-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
27 A
Rds On - Drain-Source-Widerstand:
104 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
36 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
111 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
CoolMOS P7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
73 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
IPL60R125P7 SP001657416
Tags
IPL60R12, IPL60R1, IPL60, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 125 mOhm 36 nC CoolMOS™ Power Mosfet - VSON-4
***ineon SCT
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use, PG-VSON-4, RoHS
***ark
Mosfet, N-Ch, 600V, 27A, Vson Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Teil # Mfg. Beschreibung Aktie Preis
IPL60R125P7AUMA1
DISTI # V72:2272_18787585		Infineon Technologies AGHIGH POWER_NEW3000
  • 75000:$1.9380
  • 30000:$1.9920
  • 15000:$2.0470
  • 6000:$2.1010
  • 3000:$2.1560
  • 1000:$2.2110
  • 500:$2.2650
  • 250:$2.5520
  • 100:$2.7260
  • 50:$3.0219
  • 25:$3.1980
  • 10:$3.2300
  • 1:$4.2130
IPL60R125P7AUMA1
DISTI # IPL60R125P7AUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$2.0348
IPL60R125P7AUMA1
DISTI # IPL60R125P7AUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$2.2062
  • 500:$2.6159
  • 100:$3.0729
  • 10:$3.7510
  • 1:$4.1800
IPL60R125P7AUMA1
DISTI # IPL60R125P7AUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$2.2062
  • 500:$2.6159
  • 100:$3.0729
  • 10:$3.7510
  • 1:$4.1800
IPL60R125P7AUMA1
DISTI # 33157307		Infineon Technologies AGHIGH POWER_NEW3000
  • 4:$4.2130
IPL60R125P7AUMA1
DISTI # IPL60R125P7AUMA1		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPL60R125P7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 18000:$1.7900
  • 30000:$1.7900
  • 12000:$1.8900
  • 3000:$1.9900
  • 6000:$1.9900
IPL60R125P7AUMA1
DISTI # SP001657416		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001657416)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€1.5900
  • 18000:€1.6900
  • 12000:€1.7900
  • 6000:€1.8900
  • 3000:€1.9900
IPL60R125P7AUMA1
DISTI # 49AC8003		Infineon Technologies AGMOSFET, N-CH, 600V, 27A, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:27A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.104ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes995
  • 1000:$2.0600
  • 500:$2.4300
  • 250:$2.7200
  • 100:$2.8700
  • 50:$3.0100
  • 25:$3.1600
  • 10:$3.3000
  • 1:$3.8900
IPL60R125P7AUMA1
DISTI # 726-IPL60R125P7AUMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$3.8500
  • 10:$3.2700
  • 100:$2.8400
  • 250:$2.6900
  • 500:$2.4100
  • 1000:$2.0400
  • 3000:$1.9300
IPL60R125P7AUMA1
DISTI # 2841639		Infineon Technologies AGMOSFET, N-CH, 600V, 27A, VSON
RoHS: Compliant		995
  • 1000:$2.9200
  • 500:$2.9800
  • 250:$3.1400
  • 100:$3.3200
  • 10:$3.7500
  • 1:$4.0200
IPL60R125P7AUMA1
DISTI # 2841639		Infineon Technologies AGMOSFET, N-CH, 600V, 27A, VSON2995
  • 500:£1.8500
  • 250:£2.0700
  • 100:£2.1900
  • 10:£2.5300
  • 1:£3.3300
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IPL60R125P7AUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,85 $
3,85 $
10
3,27 $
32,70 $
100
2,84 $
284,00 $
250
2,69 $
672,50 $
500
2,41 $
1 205,00 $
1000
2,04 $
2 040,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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