IRF6668TRPBF

Mfr. #:: IRF6668TRPBF
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF6668TRPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: DirectFET-MZ

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 80 V

Id - Kontinuierlicher Drainstrom:: 55 A

Rds On - Drain-Source-Widerstand:: 12 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 4 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 22 nC

Minimale Betriebstemperatur:: - 40 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2.8 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: DirektFET

Verpackung:: Spule

Höhe:: 0.7 mm

Länge:: 6.35 mm

Transistortyp:: 1 N-Channel

Breite:: 5.05 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 22 S

Abfallzeit:: 23 ns

Produktart:: MOSFET

Anstiegszeit:: 13 ns

Werkspackungsmenge:: 4800

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 7.1 ns

Typische Einschaltverzögerungszeit:: 19 ns

Teil # Aliase:: SP001551178

Tags: IRF6668T, IRF6668, IRF666, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6668TRPBF Beschreibung

***ure Electronics: Single N-Channel 80 V 15 mOhm 31 nC HEXFET® Power Mosfet - DirectFET®

***el Electronic: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFE

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MZ ;RoHS Compliant: Yes

***ineon: Target Applications: AC-DC; Battery Operated Drive; Class D Audio; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side

***ernational Rectifier: A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 55 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***nell: MOSFET, N-CH, 80V, 55A, DIRECTFET MZ; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MZ; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 60V, 57A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:57A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:230A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ure Electronics: Single N-Channel 60 V 11 mOhm 36 nC HEXFET® Power Mosfet - DirectFET®

*** Source Electronics: Benchmark MOSFETs Product Selection Guide | MOSFET N-CH 60V 13.4A DIRECTFET

***nell: MOSFET, N-CH, 60V, 67A, DIRECTFET MZ; Transistor Polarity: N Channel; Continuous Drain Current Id: 67A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

***ernational Rectifier: A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 67 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ineon: Target Applications: AC-DC; Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side

***emi: N-Channel PowerTrench® MOSFET, 60V, 62A, 13.5mΩ

***Yang: Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ure Electronics: N-Channel 60 V 13.5 mOhm Surface Mount PowerTrench Mosfet TO-263AB

***r Electronics: Power Field-Effect Transistor, 62A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N, SMD, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:60V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:115W; Transistor Case Style:TO-263AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:62A; Package / Case:TO-263AB; Power Dissipation Pd:115W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114

***ical: Trans MOSFET N-CH 60V 9.9A Automotive 3-Pin(2+Tab) TO-252AA T/R

***emi: N-Channel PowerTrench® MOSFET 60V, 50A, 13mΩ

***ure Electronics: N-Channel 60 V 50 A 13 mOhm PowerTrench® Mosfet - DPAK

***r Electronics: Power Field-Effect Transistor, 9.9A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ernational Rectifier: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package

***(Formerly Allied Electronics): MOSFET 100V, Gen 10.7, 11.68 mOhm max, 56.2 nC Qg

***trelec: MOSFET PQFN-8 (5x6) N 100V 11 A

***et: Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET,N CH,100V,11A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:63A; Power Dissipation Pd:114W; Voltage Vgs Max:20V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF6668TRPBF DISTI # V72:2272_13890378	Infineon Technologies AG	Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R RoHS: Compliant	3600	3000:$0.7702 1000:$0.8118 500:$0.9154 250:$1.1257 100:$1.1379 25:$1.3552 10:$1.3740 1:$1.4907
IRF6668TRPBF DISTI # IRF6668TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 80V 55A DIRECTFET RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR)	On Order	4800:$0.7393
IRF6668TRPBF DISTI # IRF6668TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 80V 55A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.8494 500:$1.0251 100:$1.3180 10:$1.6400 1:$1.8200
IRF6668TRPBF DISTI # IRF6668TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 55A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.8494 500:$1.0251 100:$1.3180 10:$1.6400 1:$1.8200
IRF6668TRPBF DISTI # 31278841	Infineon Technologies AG	Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R RoHS: Compliant	4800	4800:$0.6509
IRF6668TRPBF DISTI # 31279017	Infineon Technologies AG	Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R RoHS: Compliant	4000	16:$0.6509
IRF6668TRPBF DISTI # 30341007	Infineon Technologies AG	Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R RoHS: Compliant	3600	3000:$0.7702 1000:$0.8118 500:$0.9154 250:$1.1257 100:$1.1379 25:$1.3552 10:$1.3740
IRF6668TRPBF DISTI # IRF6668TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 80V 55A 7-Pin Direct-FET MZ T/R - Tape and Reel (Alt: IRF6668TRPBF) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 0	4800:$0.7439 9600:$0.7179 19200:$0.6919 28800:$0.6679 48000:$0.6559
IRF6668TRPBF DISTI # SP001551178	Infineon Technologies AG	Trans MOSFET N-CH 80V 55A 7-Pin Direct-FET MZ T/R (Alt: SP001551178) RoHS: Compliant Min Qty: 4800 Container: Tape and Reel	Europe - 0	4800:€0.9399 9600:€0.7689 19200:€0.7049 28800:€0.6499 48000:€0.6039
IRF6668TRPBF DISTI # 91Y4746	Infineon Technologies AG	MOSFET, N-CH, 80V, 55A, DIRECTFET MZ,Transistor Polarity:N Channel,Continuous Drain Current Id:55A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	3860	1:$1.5300 10:$1.3000 25:$1.2100 50:$1.1300 100:$1.0400 250:$0.9730 500:$0.9050 1000:$0.7500
IRF6668TRPBF DISTI # 70019587	Infineon Technologies AG	MOSFET,80V,55A,15 MOHM,22 NC QG,MED CAN RoHS: Compliant	1817	1:$2.9600 10:$2.6100 100:$2.2800 500:$1.9800 1000:$1.7400
IRF6668TRPBF DISTI # 942-IRF6668TRPBF	Infineon Technologies AG	MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC RoHS: Compliant	5582	1:$1.5300 10:$1.3000 100:$1.0400 500:$0.9050 1000:$0.7500 2500:$0.6980 4800:$0.6730 9600:$0.6470
IRF6668TRPBF DISTI # IRF6668TRPBF	Infineon Technologies AG	RoHS: Compliant	0	10:€1.0900 50:€0.9120 200:€0.8320 500:€0.8040
IRF6668TRPBF DISTI # C1S322000482364	Infineon Technologies AG	Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R RoHS: Compliant	3600	250:$1.1257 100:$1.1379 25:$1.3552 10:$1.3740
IRF6668TRPBF DISTI # C1S322000482373	Infineon Technologies AG	Trans MOSFET N-CH Si 80V 55A 7-Pin Direct-FET MZ T/R RoHS: Compliant	4800	4800:$0.7880
IRF6668TRPBF DISTI # 2579988	Infineon Technologies AG	MOSFET, N-CH, 80V, 55A, DIRECTFET MZ RoHS: Compliant	3860	1:$2.8800 10:$2.6000 100:$2.0900 500:$1.6300 1000:$1.3500
IRF6668TRPBF DISTI # 2579988	Infineon Technologies AG	MOSFET, N-CH, 80V, 55A, DIRECTFET MZ RoHS: Compliant	4800	5:£1.3900 25:£1.2600 100:£1.0000
IRF6668TRPBF DISTI # XSLY00000000780	INFINEON/IR	DirectFET MZ RoHS: Compliant	4800	4800:$0.8900

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	Mfr.#: SI3127DV-T1-GE3 OMO.#: OMO-SI3127DV-T1-GE3	MOSFET -60V Vds 20V Vgs TSOP-6
	Mfr.#: IRF6644TRPBF OMO.#: OMO-IRF6644TRPBF	MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs
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	Mfr.#: SM4T56CAY OMO.#: OMO-SM4T56CAY-STMICROELECTRONICS	TVS Diodes - Transient Voltage Suppressors 400 W 2.3kW Transil 5V to 70V Bi
	Mfr.#: IR2183STRPBF OMO.#: OMO-IR2183STRPBF-INFINEON-TECHNOLOGIES	Gate Drivers Hlf Brdg Drvr Soft Trn On 500ns
	Mfr.#: SI3127DV-T1-GE3 OMO.#: OMO-SI3127DV-T1-GE3-VISHAY	MOSFET P-CHAN 60V TSOP6S

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von IRF6668TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,53 $~~; ~~1,53 $~~

10: ~~1,30 $~~; ~~13,00 $~~

100: ~~1,04 $~~; ~~104,00 $~~

500: ~~0,90 $~~; ~~452,50 $~~

1000: ~~0,75 $~~; ~~750,00 $~~

2500: ~~0,70 $~~; ~~1 745,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRF6668TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes