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STH210N75F6-2

STH210N75F6-2
Mfr. #:
STH210N75F6-2
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors MOSFET N-ch 75V 0.0022 Ohm 180A STripFET VI
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STH210N75F6-2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
STH210N75F6-2 Mehr Informationen STH210N75F6-2 Product Details
Produkteigenschaft
Attributwert
Hersteller
ST
Produktkategorie
FETs - Einzeln
Serie
STH210N75F6-2
Verpackung
Spule
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
300 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
180 A
Vds-Drain-Source-Breakdown-Voltage
75 V
Rds-On-Drain-Source-Widerstand
2.8 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
171 nC
Tags
STH21, STH2, STH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 75 V 2.8 mOhm STripFET™ VI DeepGATE™ Power Mosfet
***et
Trans MOSFET N-CH 75V 180A 3-Pin(2+Tab) H2PAK T/R
***ment14 APAC
MOSFET, N CH, 75V, 180A, H2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:H2PAK-2; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +175°C
Teil # Mfg. Beschreibung Aktie Preis
STH210N75F6-2
DISTI # 497-11251-2-ND		STMicroelectronicsMOSFET N-CH 75V 180A H2PAK-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    STH210N75F6-2
    DISTI # 497-11251-1-ND    		STMicroelectronicsMOSFET N-CH 75V 180A H2PAK-2
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      STH210N75F6-2
      DISTI # 497-11251-6-ND      		STMicroelectronicsMOSFET N-CH 75V 180A H2PAK-2
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        STH210N75F6-2
        DISTI # 511-STH210N75F6-2        		STMicroelectronicsMOSFET N-ch 75V 0.0022 Ohm 180A STripFET VI
        RoHS: Compliant        		0
          STH210N75F6-2
          DISTI # 2098250          		STMicroelectronicsMOSFET, N CH, 75V, 180A, H2PAK
          RoHS: Compliant          		16
          • 1:£1.4200
          • 10:£1.1800
          Bild Teil # Beschreibung
          STH210N75F6-2

          Mfr.#: STH210N75F6-2

          OMO.#: OMO-STH210N75F6-2-STMICROELECTRONICS

          		 IGBT Transistors MOSFET N-ch 75V 0.0022 Ohm 180A STripFET VI
          STH210N75F6

          Mfr.#: STH210N75F6

          OMO.#: OMO-STH210N75F6-1190

          		 Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          2500
          Menge eingeben:
          Der aktuelle Preis von STH210N75F6-2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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