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IPP120N20NFDAKSA1

IPP120N20NFDAKSA1
Mfr. #:
IPP120N20NFDAKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 200V 84A TO220-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP120N20NFDAKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPP120N20NFDAKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
84 A
Rds On - Drain-Source-Widerstand:
10.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
65 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Serie:
OptiMOS Fast Diode
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
70 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
IPP120N20NFD SP001108122
Gewichtseinheit:
0.211644 oz
Tags
IPP120N, IPP120, IPP12, IPP1, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 84 A, 200 V, 3-Pin TO-220 Infineon IPP120N20NFDAKSA1
***ure Electronics
IPP120N20NFD Series 200 V 84 A OptiMOS™FD Power Transistor MOSFET - TO-220-3
***ical
Trans MOSFET N-CH 200V 84A Automotive 3-Pin(3+Tab) TO-220 Tube
***p One Stop Japan
Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 200V 84A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 200V 84A TO220
***ronik
N-CH 200V 84A 12mOhm TO-220-3
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0106Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; No. Of Pins:3Pins Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 84A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 200V, 84A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:84A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0106ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
OptiMOS™ Fast Diode (FD) Power MOSFETs
Infineon OptiMOS™ Fast Diode (FD) devices are Infineon's latest generation N-channel power MOSFETs in 200V and 250V options. These Infineon OptiMOS FD devices feature reduced Qrr, very low on-resistance, and 175ºC operating temperature. These Infineon OptiMOS FD MOSFETs are optimized for body diode hard commutation and ideal for applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control, and DC/AC inverter.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPP120N20NFDAKSA1
DISTI # V99:2348_06377684		Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		105
  • 500:$3.0419
  • 100:$3.7930
  • 25:$4.3949
  • 10:$5.1190
  • 1:$6.6099
IPP120N20NFDAKSA1
DISTI # V36:1790_06377684		Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		10
  • 500:$3.0419
  • 100:$3.7930
  • 25:$4.3949
  • 10:$5.1190
  • 1:$6.6099
IPP120N20NFDAKSA1
DISTI # IPP120N20NFDAKSA1-ND		Infineon Technologies AGMOSFET N-CH 200V 84A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		2343In Stock
  • 2500:$3.2068
  • 500:$4.0025
  • 100:$4.7017
  • 25:$5.4252
  • 10:$5.7380
  • 1:$6.3900
IPP120N20NFDAKSA1
DISTI # 32925566		Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1420
  • 5:$2.4548
IPP120N20NFDAKSA1
DISTI # 31005711		Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 6:$4.2875
IPP120N20NFDAKSA1
DISTI # 30883914		Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		105
  • 3:$6.6099
IPP120N20NFDAKSA1
DISTI # 30529872		Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		10
  • 3:$6.6099
IPP120N20NFDAKSA1
DISTI # IPP120N20NFDAKSA1		Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP120N20NFDAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 260
  • 5000:$2.3343
  • 2500:$2.3766
  • 1500:$2.4593
  • 1000:$2.5515
  • 500:$2.6471
IPP120N20NFDAKSA1
DISTI # SP001108122		Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin TO-220 Tube (Alt: SP001108122)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.6200
  • 500:€3.2500
  • 250:€3.6300
  • 100:€3.8200
  • 10:€4.4100
  • 1:€5.7400
IPP120N20NFDAKSA1.
DISTI # 27AC6745		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:84A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0106ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 500:$3.8100
  • 250:$4.2400
  • 100:$4.4700
  • 50:$4.7000
  • 25:$4.9300
  • 10:$5.1600
  • 1:$6.0700
IPP120N20NFDAKSA1
DISTI # 726-IPP120N20NFDAKS1		Infineon Technologies AGMOSFET N-Ch 200V 84A TO220-3
RoHS: Compliant		2574
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2500:$3.0500
IPP120N20NFD
DISTI # 726-IPP120N20NFD		Infineon Technologies AGMOSFET N-Ch 200V 84A TO220-3
RoHS: Compliant		527
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2500:$3.0500
IPP120N20NFDAKSA1
DISTI # 9064422P		Infineon Technologies AGMOSFET N-CHANNEL 200V 84A OPTIMOS TO220, TU746
  • 250:£3.0450
  • 100:£3.2050
  • 50:£3.4550
  • 10:£3.7100
IPP120N20NFDAKSA1
DISTI # 9064422		Infineon Technologies AGMOSFET N-CHANNEL 200V 84A OPTIMOS TO220, PK26
  • 250:£3.0450
  • 100:£3.2050
  • 50:£3.4550
  • 10:£3.7100
  • 2:£4.6700
IPP120N20NFDAKSA1
DISTI # IPP120N20NFDAKSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,84A,300W,PG-TO220-311
  • 100:$4.2100
  • 10:$4.8500
  • 3:$6.0500
  • 1:$7.0200
IPP120N20NFDAKSA1
DISTI # 2480855		Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-220-3
RoHS: Compliant		0
  • 500:$5.7400
  • 250:$6.3900
  • 100:$6.7400
  • 10:$7.7800
  • 1:$9.1500
IPP120N20NFDAKSA1
DISTI # 2480855		Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-220-33
  • 500:£2.9700
  • 250:£3.2900
  • 100:£3.4800
  • 10:£4.0200
  • 1:£5.2100
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von IPP120N20NFDAKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,07 $
6,07 $
10
5,16 $
51,60 $
100
4,47 $
447,00 $
250
4,24 $
1 060,00 $
500
3,81 $
1 905,00 $
1000
3,21 $
3 210,00 $
2500
3,05 $
7 625,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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