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IRFB4020PBF

IRFB4020PBF
Mfr. #:
IRFB4020PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB4020PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFB4020PBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
18 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
18 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
100 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
24 S
Abfallzeit:
6.3 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16 ns
Typische Einschaltverzögerungszeit:
7.8 ns
Teil # Aliase:
SP001564028
Gewichtseinheit:
0.211644 oz
Tags
IRFB4020P, IRFB402, IRFB40, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET; N Ch.; Digital Audio; 200V; 18A; 100 MOHM; 18 NC QG; TO-220AB; Pb-Free
***ineon SCT
200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4020; Current Id Max:18A; N-channel Gate Charge:18nC; Package / Case:TO-220AB; Power Dissipation Pd:100W; Power Dissipation Pd:100mW; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V
***ure Electronics
Single N-Channel 150 V 0.082 Ohm 95 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 150V, 21A, 70 mOhm, 63.3 nC Qg, TO-220AB
***p One Stop Global
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 136 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 150V, 21A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:150V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:27A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.6°C/W; Package / Case:TO-220AB; Power Dissipation Pd:136W; Power Dissipation Pd:136W; Pulse Current Idm:108A; Termination Type:Through Hole; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon SCT
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
***ure Electronics
Single N-Channel 150 V 95 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 150V 17A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:150V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:80W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4019; Current Id Max:17A; N-channel Gate Charge:13nC; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80mW; Pulse Current Idm:51A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 200V 18A 3-Pin (3+Tab) TO-220AB
*** Stop Electro
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:TO-220; Power Dissipation Pd:125W; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 150V, 23A, 90 mOhm, 37 nC Qg, TO-220AB
***Yang
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:150V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23A; Package / Case:TO-220AB; Power Dissipation Pd:136W; Power Dissipation Pd:136W; Pulse Current Idm:92A; Voltage Vds Typ:150V; Voltage Vgs th Max:5.5V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ure Electronics
Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB
*** Source Electronics
Trans MOSFET N-CH Si 250V 14A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 250V 14A TO-220AB
***ment14 APAC
MOSFET, N, 250V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:250V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds:250V; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ser
MOSFETs 22a, 200V NCh MOSFET 0.125 Ohm
***i-Key
MOSFET N-CH 200V 22A TO-220AB
***Yang
PWR MOS ULTRAFET 22A/200V/0.125 OHM TO-220 - Bulk
***el Nordic
Contact for details
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFB4020PBF
DISTI # V99:2348_13889703		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube835
  • 1000:$0.5981
  • 500:$0.8251
  • 100:$0.9143
  • 10:$1.1111
  • 1:$1.2467
IRFB4020PBF
DISTI # IRFB4020PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 18A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		12076In Stock
  • 1000:$0.8148
  • 500:$1.0320
  • 100:$1.3308
  • 10:$1.6840
  • 1:$1.9000
IRFB4020PBF
DISTI # 25093424		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube5007
  • 16:$0.6025
IRFB4020PBF
DISTI # 29513003		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube835
  • 500:$0.8251
  • 100:$0.9143
  • 12:$1.1111
IRFB4020PBF
DISTI # IRFB4020PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4020PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 17605
  • 1:$0.5719
  • 10:$0.5639
  • 25:$0.5559
  • 50:$0.5479
  • 100:$0.5279
  • 500:$0.5109
  • 1000:$0.5009
IRFB4020PBF
DISTI # SP001564028		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB (Alt: SP001564028)
RoHS: Compliant
Min Qty: 1		Europe - 200
  • 1:€1.0959
  • 10:€1.0119
  • 25:€1.0099
  • 50:€1.0069
  • 100:€0.8729
  • 500:€0.7649
  • 1000:€0.5809
IRFB4020PBF
DISTI # IRFB4020PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB (Alt: IRFB4020PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRFB4020PBF
    DISTI # 61M6831    		Infineon Technologies AGMOSFET Transistor, N Channel, 18 A, 200 V, 100 mohm, 10 V, 4.9 V RoHS Compliant: Yes289
    • 1:$1.6300
    • 10:$1.3900
    • 100:$1.0700
    • 500:$0.9390
    • 1000:$0.7410
    • 2500:$0.6570
    IRFB4020PBF
    DISTI # 70017969    		Infineon Technologies AGMOSFET,N Ch.,Digital Audio,200V,18A,100 MOHM,18 NC QG,TO-220AB,Pb-Free
    RoHS: Compliant    		14
    • 1:$2.0400
    • 10:$1.8000
    • 100:$1.5700
    • 500:$1.3600
    • 1000:$1.2000
    IRFB4020PBF
    DISTI # 942-IRFB4020PBF    		Infineon Technologies AGMOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud
    RoHS: Compliant    		203
    • 1:$1.6300
    • 10:$1.3900
    • 100:$1.0700
    • 500:$0.9390
    • 1000:$0.7410
    • 2000:$0.6570
    IRFB4020PBFInfineon Technologies AGSingle N-Channel 200 V 100 mOhm 29 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		5185Tube
    • 15:$0.7600
    • 150:$0.6850
    • 1000:$0.5750
    IRFB4020PBFInternational Rectifier 
    RoHS: Not Compliant    		5
    • 1000:$0.6500
    • 500:$0.6800
    • 100:$0.7100
    • 25:$0.7400
    • 1:$0.7900
    IRFB4020PBF
    DISTI # 6886939P    		Infineon Technologies AGMOSFET N-CHANNEL 200V 18A HEXFET TO220AB, TU675
    • 25:£1.0100
    • 50:£0.8920
    • 100:£0.7740
    • 250:£0.7580
    IRFB4020PBF
    DISTI # 6886939    		Infineon Technologies AGMOSFET N-CHANNEL 200V 18A HEXFET TO220AB, PK215
    • 5:£1.2700
    • 25:£1.0100
    • 50:£0.8920
    • 100:£0.7740
    • 250:£0.7580
    IRFB4020PBF
    DISTI # IRFB4020PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,18A,100W,TO220AB29
    • 1:$1.4200
    • 3:$1.3400
    • 10:$1.0900
    • 100:$0.9800
    IRFB4020PBF
    DISTI # TMOSP12114    		Infineon Technologies AGN-CH 200V 18A 100mOhm TO220-3
    RoHS: Compliant    		Stock DE - 350Stock US - 0
    • 50:$1.0536
    • 150:$0.9934
    • 250:$0.9332
    • 600:$0.8429
    • 1000:$0.8128
    IRFB4020PBF
    DISTI # IRFB4020PBF    		Infineon Technologies AGN-Ch 200V 18A 100W 0,10R TO220AB
    RoHS: Compliant    		2630
    • 10:€0.9050
    • 50:€0.6650
    • 200:€0.6050
    • 500:€0.5825
    IRFB4020PBF
    DISTI # 1436954    		Infineon Technologies AGMOSFET, N, 200V, TO-220AB
    RoHS: Compliant    		396
    • 1:$2.5900
    • 10:$2.2000
    • 100:$1.7000
    • 500:$1.5000
    • 1000:$1.1800
    • 2000:$1.1800
    IRFB4020PBF
    DISTI # C1S327400131700    		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		2048
    • 500:$0.8520
    • 200:$0.9640
    • 100:$0.9740
    • 50:$1.0300
    • 10:$1.2600
    • 1:$2.0800
    IRFB4020PBF
    DISTI # C1S322000488535    		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		5007
    • 2000:$0.7680
    • 1000:$0.8280
    • 500:$1.0800
    • 100:$1.1700
    • 25:$1.4300
    • 5:$1.7600
    IRFB4020PBF
    DISTI # 1436954    		Infineon Technologies AGMOSFET, N, 200V, TO-220AB
    RoHS: Compliant    		319
    • 5:£1.0700
    • 25:£0.9470
    • 100:£0.8240
    • 250:£0.7740
    • 500:£0.7230
    IRFB4020PBF
    DISTI # XSLY00000000913    		INFINEON/IRTO-220AB
    RoHS: Compliant    		1440
    • 1100:$0.6429
    • 1440:$0.6000
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    IRS20957STRPBF

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    		 Gate Drivers AUTO HI VTG 100V 500ns 800kHz
    IRG4BC30WPBF

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    		 IGBT Transistors 600V Warp 60-150kHz
    IRFB4227PBF

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    		 MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
    STF11NM60ND

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    		 MOSFET N-Ch, 600V-0.37ohms FDMesh 10A
    IRF640NPBF

    Mfr.#: IRF640NPBF

    OMO.#: OMO-IRF640NPBF

    		 MOSFET MOSFT 200V 18A 150mOhm 44.7nC
    STW26NM60N

    Mfr.#: STW26NM60N

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    		 MOSFET N-channel 600 V Mdmesh II Power
    SG3525AP

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    		 Switching Controllers Voltage Mode w/Sync
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von IRFB4020PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,62 $
    1,62 $
    10
    1,38 $
    13,80 $
    100
    1,06 $
    106,00 $
    500
    0,94 $
    469,50 $
    1000
    0,74 $
    741,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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