 |  | | |
| PartNumber | IRFB4020PBF | IRFB4020PBF, IRFB4020 | IRFB4020PBF,FB4020,IRFB4 |
| Description | MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 100 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 24 S | - | - |
| Fall Time | 6.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 7.8 ns | - | - |
| Part # Aliases | SP001564028 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFB4020PBF | MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud | |
| IRFB4020PBF | Darlington Transistors MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud | ||
| IRFB4020PBF, IRFB4020 | Neu und Original | ||
| IRFB4020PBF,FB4020,IRFB4 | Neu und Original | ||
| IRFB4020PBF,IRFB4020,FB4 | Neu und Original |