OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IPB120N06S402ATMA2

IPB120N06S402ATMA2
Mfr. #:
IPB120N06S402ATMA2
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 120A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB120N06S402ATMA2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB120N06S402ATMA2 DatasheetIPB120N06S402ATMA2 Datasheet (P4-P6)IPB120N06S402ATMA2 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
IPB120N06S402ATMA2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
2.4 mOhms
Aufbau:
Single
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
IPB120N06
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
IPB120N06S4-02 IPB12N6S42XT SP001028776
Gewichtseinheit:
0.068654 oz
Tags
IPB120N06S40, IPB120N06S, IPB120N06, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***et
Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R
***el Electronic
MOSFET N-CH 60V 120A TO263-3
***et
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
***ponent Stockers USA
120 A 60 V 0.0021 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***hard Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
***hard Electronics
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
***roFlash
SQM120N06-3m5LGE3 N-channel MOSFET Transistor, 120 A, 60 V, 2+Tab-Pin TO-263
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 60V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited
***ineon SCT
60V, N-Ch, 3.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 60 V 3.4 mOhm 170 nC OptiMOS®-T2 Power-Transistor -PG-TO263-3-2
***ark
Channel Type:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:90A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:150W; No. Of Pins:3Pins Rohs Compliant: Yes
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ure Electronics
N-Channel 60 V 2.1 mOhm 375 W SMT TrenchFET Power Mosfet - TO-263
***ark
Mosfet, N-Ch, 60V, 120A, To-263 Rohs Compliant: Yes
*** Americas
N-CHANNEL 60-V (D-S) MOSFET
***emi
N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ
***ow.cn
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 110A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***ical
Trans MOSFET N-CH Si 60V 210A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; Enhanced dV/dT and dI/dT capability; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ical
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ
***r Electronics
Power Field-Effect Transistor, 110A I(D), 60V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Teil # Mfg. Beschreibung Aktie Preis
IPB120N06S402ATMA2
DISTI # IPB120N06S402ATMA2-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.6945
IPB120N06S402ATMA2
DISTI # IPB120N06S402ATMA2		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S402ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.4900
  • 2000:$1.4900
  • 4000:$1.3900
  • 6000:$1.3900
  • 10000:$1.2900
IPB120N06S402ATMA2
DISTI # SP001028776		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP001028776)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.7900
  • 2000:€1.4900
  • 4000:€1.3900
  • 6000:€1.2900
  • 10000:€1.1900
IPB120N06S402ATMA2
DISTI # 726-IPB120N06S402ATM		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
RoHS: Compliant		1000
  • 1:$2.9200
  • 10:$2.4800
  • 100:$2.1500
  • 250:$2.0400
  • 500:$1.8300
  • 1000:$1.5500
IPB120N06S4-02
DISTI # 726-IPB120N06S4-02		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
RoHS: Compliant		0
    IPB120N06S402ATMA2
    DISTI # 8269235P    		Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS-T2 TO263, RL970
    • 100:£1.4810
    • 200:£1.3680
    Bild Teil # Beschreibung
    LTC7004EMSE#PBF

    Mfr.#: LTC7004EMSE#PBF

    OMO.#: OMO-LTC7004EMSE-PBF

    		 Gate Drivers Fast 65V Protected High-Side NMOS Static Switch Driver
    UDZVTE-175.1B

    Mfr.#: UDZVTE-175.1B

    OMO.#: OMO-UDZVTE-175-1B

    		 Zener Diodes Diode Zener Sgl 5.09V 200mW
    V35PWM10HM3/I

    Mfr.#: V35PWM10HM3/I

    OMO.#: OMO-V35PWM10HM3-I

    		 Schottky Diodes & Rectifiers 35A If(AV) TO-252AE AEC-Q101 Qualified
    TPS560430XFDBVT

    Mfr.#: TPS560430XFDBVT

    OMO.#: OMO-TPS560430XFDBVT

    		 Switching Voltage Regulators NIXON TPS560430XFDBVT DC-DC CONVERTER
    XB24CAPIT-001

    Mfr.#: XB24CAPIT-001

    OMO.#: OMO-XB24CAPIT-001

    		 Zigbee Modules (802.15.4) XBee, S2C, 2.4GHz Through-hole,PCB ant
    TPS560430XFDBVT

    Mfr.#: TPS560430XFDBVT

    OMO.#: OMO-TPS560430XFDBVT-TEXAS-INSTRUMENTS

    		 600-mA Synchronous Step-Down Converte
    DF51A-14DP-2DSA(01)

    Mfr.#: DF51A-14DP-2DSA(01)

    OMO.#: OMO-DF51A-14DP-2DSA-01--HIROSE

    		 Neu und Original
    DF51A-2P-2DSA(01)

    Mfr.#: DF51A-2P-2DSA(01)

    OMO.#: OMO-DF51A-2P-2DSA-01--HIROSE

    		 Neu und Original
    DF51A-4P-2DSA(01)

    Mfr.#: DF51A-4P-2DSA(01)

    OMO.#: OMO-DF51A-4P-2DSA-01--HIROSE

    		 Neu und Original
    V35PWM10HM3/I

    Mfr.#: V35PWM10HM3/I

    OMO.#: OMO-V35PWM10HM3-I-VISHAY

    		 DIODE SCHOTTKY 100V 35A SLIMDPAK
    Verfügbarkeit
    Aktie:
    373
    Auf Bestellung:
    2356
    Menge eingeben:
    Der aktuelle Preis von IPB120N06S402ATMA2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,91 $
    2,91 $
    10
    2,47 $
    24,70 $
    100
    2,14 $
    214,00 $
    250
    2,03 $
    507,50 $
    500
    1,82 $
    910,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    More Newest Products
    Top