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| PartNumber | IPB120N06S402ATMA2 | IPB120N06S403ATMA1 | IPB120N06S402ATMA1 |
| Description | MOSFET N-Ch 60V 120A D2PAK-2 | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | MOSFET N-CHANNEL_55/60V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 2.4 mOhms | 2.3 mOhms | - |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | IPB120N06 | XPB120N06 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPB120N06S4-02 IPB12N6S42XT SP001028776 | IPB120N06S4-03 IPB120N06S403XT SP000415558 | IPB120N06S4-02 IPB120N06S402XT SP000415560 |
| Unit Weight | 0.068654 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 160 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 167 W | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 15 ns | - |
| Rise Time | - | 10 ns | - |
| Typical Turn Off Delay Time | - | 80 ns | - |
| Typical Turn On Delay Time | - | 40 ns | - |