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IPB036N12N3GATMA1

IPB036N12N3GATMA1
Mfr. #:
IPB036N12N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB036N12N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
120 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
2.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
211 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
98 S
Abfallzeit:
21 ns
Produktart:
MOSFET
Anstiegszeit:
52 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
76 ns
Typische Einschaltverzögerungszeit:
35 ns
Teil # Aliase:
G IPB036N12N3 IPB36N12N3GXT SP000675204
Gewichtseinheit:
0.063846 oz
Tags
IPB036N12N3G, IPB036N12N3, IPB036, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 120V, 180A, TO263-7; Transistor Polarity:N Channel; Continuous Dra
***ure Electronics
Single N-Channel 120 V 3.6 mOhm 158 nC OptiMOS™ Power Mosfet - D2PAK-7
***p One Stop Japan
Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
***ineon SCT
The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TO263-7, RoHS
***nell
MOSFET, N-CH, 120V, 180A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
Teil # Mfg. Beschreibung Aktie Preis
IPB036N12N3GATMA1
DISTI # V72:2272_06378504		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		980
  • 500:$4.0030
  • 250:$4.4290
  • 100:$4.6430
  • 25:$5.2930
  • 10:$5.3010
  • 1:$6.1320
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		752In Stock
  • 500:$4.3574
  • 100:$5.2007
  • 10:$6.3250
  • 1:$7.0300
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		752In Stock
  • 500:$4.3574
  • 100:$5.2007
  • 10:$6.3250
  • 1:$7.0300
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$3.8211
IPB036N12N3GATMA1
DISTI # 31442662		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$4.4533
IPB036N12N3GATMA1
DISTI # 31308714		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		980
  • 500:$4.0030
  • 250:$4.4290
  • 100:$4.6430
  • 25:$5.2930
  • 10:$5.3010
  • 2:$6.1320
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB036N12N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.4900
  • 2000:$3.3900
  • 4000:$3.2900
  • 6000:$3.1900
  • 10000:$3.0900
IPB036N12N3GATMA1
DISTI # SP000675204		Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263 (Alt: SP000675204)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€3.2900
  • 2000:€3.1900
  • 4000:€3.0900
  • 6000:€2.7900
  • 10000:€2.5900
IPB036N12N3GATMA1
DISTI # 47W3463		Infineon Technologies AGMOSFET, N CHANNEL, 120V, 180A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0029ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1169
  • 1:$6.5700
  • 10:$5.5900
  • 25:$5.3400
  • 50:$5.0900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
IPB036N12N3GATMA1Infineon Technologies AGSingle N-Channel 120 V 3.6 mOhm 158 nC OptiMOS Power Mosfet - D2PAK-7
RoHS: Not Compliant		1000Reel
  • 1000:$3.1800
IPB036N12N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant		2085
  • 1000:$2.6800
  • 500:$2.8300
  • 100:$2.9400
  • 25:$3.0700
  • 1:$3.3000
IPB036N12N3 G
DISTI # 726-IPB036N12N3GXT		Infineon Technologies AGMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		9753
  • 1:$6.5700
  • 10:$5.5900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
  • 1000:$3.4800
IPB036N12N3GATMA1
DISTI # 726-IPB036N12N3GATMA		Infineon Technologies AGMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		1170
  • 1:$6.5700
  • 10:$5.5900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
  • 1000:$3.4800
IPB036N12N3GATMA1
DISTI # 7545428		Infineon Technologies AGMOSFET N-CH 120V 180A OPTIMOS3 TO263, EA364
  • 1:£4.8500
  • 10:£3.8400
  • 50:£3.5100
  • 250:£3.1700
  • 500:£2.8300
IPB036N12N3GATMA1
DISTI # 7545428P		Infineon Technologies AGMOSFET N-CH 120V 180A OPTIMOS3 TO263, RL1451
  • 10:£3.8400
  • 50:£3.5100
  • 250:£3.1700
  • 500:£2.8300
IPB036N12N3GATMA1
DISTI # 2212819		Infineon Technologies AGMOSFET, N-CH, 120V, 180A, TO263-7
RoHS: Compliant		1169
  • 1:$10.4000
  • 10:$8.8500
  • 100:$7.6600
  • 250:$7.2800
  • 500:$6.5300
  • 1000:$5.5100
IPB036N12N3GATMA1
DISTI # 2212819		Infineon Technologies AGMOSFET, N-CH, 120V, 180A, TO263-7
RoHS: Compliant		1627
  • 1:£4.6100
  • 10:£3.9200
  • 100:£3.3900
  • 250:£3.2100
  • 500:£2.8900
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPB036N12N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,56 $
6,56 $
10
5,58 $
55,80 $
100
4,83 $
483,00 $
250
4,59 $
1 147,50 $
500
4,11 $
2 055,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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