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SIA850DJ-T1-GE3

SIA850DJ-T1-GE3
Mfr. #:
SIA850DJ-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 190V 0.95A SC70-6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA850DJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SIA8, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 190V 0.47A 6-Pin PowerPAK SC-70 T/R
***i-Key
MOSFET N-CH 190V 0.95A SC70-6
***
N-CH 190V W/190V D10D
***ark
MOSFET,N CH,+ DI,190V,0.95A,SC70PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:190V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.9W; Operating ;RoHS Compliant: Yes
***nell
MOSFET,N CH,+ DI,190V,0.95A,SC70PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:190V; On State Resistance:3ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:16V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; Current Id Max:470mA; Power Dissipation:1.9W
***ment14 APAC
MOSFET,N CH,+ DI,190V,0.95A,SC70PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:190V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:470mA; Power Dissipation Pd:1.9W; Voltage Vgs Max:16V
Teil # Mfg. Beschreibung Aktie Preis
SIA850DJ-T1-GE3
DISTI # SIA850DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 190V 0.95A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIA850DJ-T1-GE3
    DISTI # SIA850DJ-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 190V 0.95A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIA850DJ-T1-GE3
      DISTI # SIA850DJ-T1-GE3DKR-ND      		Vishay SiliconixMOSFET N-CH 190V 0.95A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIA850DJ-T1-GE3
        DISTI # 781-SIA850DJ-GE3        		Vishay IntertechnologiesMOSFET 190V 0.95A 7.0W
        RoHS: Compliant        		0
          Bild Teil # Beschreibung
          SIA850DJ-T1-GE3

          Mfr.#: SIA850DJ-T1-GE3

          OMO.#: OMO-SIA850DJ-T1-GE3

          		 MOSFET 190V 0.95A 7.0W
          SIA850DJ-T1-GE3

          Mfr.#: SIA850DJ-T1-GE3

          OMO.#: OMO-SIA850DJ-T1-GE3-VISHAY

          		 MOSFET N-CH 190V 0.95A SC70-6
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          3500
          Menge eingeben:
          Der aktuelle Preis von SIA850DJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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