 | | | |
| PartNumber | SIA811ADJ-T1-GE3 | SIA810DJ-T1-GE3 | SIA810DJ-T1-E3 |
| Description | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SC70-6 | PowerPAK-SC70-6 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 116 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 13 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 6.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | LITTLE FOOT, PowerPAK | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SIA | SIA | SIA |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 7 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 45 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | SIA811ADJ-GE3 | SIA810DJ-GE3 | SIA810DJ-E3 |
| Unit Weight | 0.000988 oz | 0.000988 oz | 0.000988 oz |
| Height | - | 0.75 mm | - |
| Length | - | 2.05 mm | - |
| Width | - | 2.05 mm | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA817EDJ-T1-GE3 | MOSFET -30V Vds 12V Vgs PowerPAK SC-70 | |
| SIA811ADJ-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK SC-70 | ||
| SIA813DJ-T1-GE3 | MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V | ||
| SIA810DJ-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3 | ||
| SIA810DJ-T1-E3 | MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3 | ||
| SIA850DJ-T1-GE3 | MOSFET 190V 0.95A 7.0W | ||
| SIA811DJ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIA811ADJ-GE3 | ||
| SIA811DJ-T1-E3 | MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V | ||
Vishay |
SIA814DJ-T1-GE3 | IGBT Transistors MOSFET 30V 4.5A 6.5W 61mohm @ 10V | |
| SIA810DJ-T1-GE3 | RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 53mohm @ 4.5V | ||
| SIA813DJ-T1-GE3 | RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V | ||
| SIA811ADJ-T1-GE3 | MOSFET P-CH 20V 4.5A PPAK SC70-6 | ||
| SIA811DJ-T1-E3 | MOSFET P-CH 20V 4.5A SC70-6 | ||
| SIA811DJ-T1-GE3 | MOSFET P-CH 20V 4.5A SC70-6 | ||
| SIA817EDJ-T1-GE3 | MOSFET P-CH 30V 4.5A SC-70-6 | ||
| SIA810DJ-T1-E3 | MOSFET N-CH 20V 4.5A SC-70-6 | ||
| SIA850DJ-T1-GE3 | MOSFET N-CH 190V 0.95A SC70-6 | ||
| SIA811ADJ-GE3 | Neu und Original | ||
| SIA811DJ | Neu und Original | ||
| SIA811DJ-T1 | Neu und Original | ||
| SIA814DJ | Neu und Original | ||
| SIA8602 | Neu und Original |