SIA810DJ-T1-GE3

SIA810DJ-T1-GE3
Mfr. #:
SIA810DJ-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA810DJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA810DJ-T1-GE3 DatasheetSIA810DJ-T1-GE3 Datasheet (P4-P6)SIA810DJ-T1-GE3 Datasheet (P7-P9)SIA810DJ-T1-GE3 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SC70-6
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
0.75 mm
Länge:
2.05 mm
Serie:
SIA
Breite:
2.05 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SIA810DJ-GE3
Gewichtseinheit:
0.000988 oz
Tags
SIA81, SIA8, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
***i-Key
MOSFET N-CH 20V 4.5A SC70-6
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:4500mA; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.077ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:1V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SIA810DJ-T1-GE3
DISTI # SIA810DJ-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.4158
SIA810DJ-T1-GE3
DISTI # SIA810DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA810DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3929
  • 6000:$0.3809
  • 12000:$0.3649
  • 18000:$0.3549
  • 30000:$0.3459
SIA810DJ-T1-GE3
DISTI # 781-SIA810DJ-T1-GE3
Vishay IntertechnologiesMOSFET 20V 4.5A 6.5W 53mohm @ 4.5V
RoHS: Compliant
0
    Bild Teil # Beschreibung
    SIA810DJ-T1-GE3

    Mfr.#: SIA810DJ-T1-GE3

    OMO.#: OMO-SIA810DJ-T1-GE3

    MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3
    SIA810DJ-T1-E3

    Mfr.#: SIA810DJ-T1-E3

    OMO.#: OMO-SIA810DJ-T1-E3

    MOSFET RECOMMENDED ALT 78-SIA400EDJ-T1-GE3
    SIA810DJ-T1-GE3

    Mfr.#: SIA810DJ-T1-GE3

    OMO.#: OMO-SIA810DJ-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 53mohm @ 4.5V
    SIA810DJ-T1-E3

    Mfr.#: SIA810DJ-T1-E3

    OMO.#: OMO-SIA810DJ-T1-E3-VISHAY

    MOSFET N-CH 20V 4.5A SC-70-6
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von SIA810DJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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