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IPW65R080CFDAFKSA1

IPW65R080CFDAFKSA1
Mfr. #:
IPW65R080CFDAFKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 43.3A TO247-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW65R080CFDAFKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPW65R080CFDAFKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
43.3 A
Rds On - Drain-Source-Widerstand:
72 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
161 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
391 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
21.1 mm
Länge:
16.13 mm
Serie:
CoolMOS CFDA
Transistortyp:
1 N-Channel
Breite:
5.21 mm
Marke:
Infineon-Technologien
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
240
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
85 ns
Typische Einschaltverzögerungszeit:
20 ns
Teil # Aliase:
IPW65R080CFDA IPW65R8CFDAXK SP000875806
Gewichtseinheit:
1.340411 oz
Tags
IPW65R080CFDA, IPW65R08, IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 80 mOhm 161 nC CoolMOS™ Power Mosfet - TO-247-3
***p One Stop Japan
Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.072Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPW65R080CFDAFKSA1
DISTI # V99:2348_06378457		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		280
  • 240:$7.5580
  • 10:$8.8290
  • 1:$9.5990
IPW65R080CFDAFKSA1
DISTI # IPW65R080CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 700V 43.3A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		1563In Stock
  • 240:$9.2271
  • 10:$11.2220
  • 1:$12.4700
IPW65R080CFDAFKSA1
DISTI # 31240601		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		280
  • 10:$8.8290
  • 1:$9.5990
IPW65R080CFDAXK
DISTI # IPW65R080CFDAFKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$6.4900
  • 480:$6.1900
  • 960:$5.9900
  • 1440:$5.7900
  • 2400:$5.6900
IPW65R080CFDAFKSA1
DISTI # 13AC9099		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:43.3A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 1:$12.6400
  • 10:$11.5200
  • 25:$11.0400
  • 50:$10.3800
  • 100:$9.7300
IPW65R080CFDAFKSA1
DISTI # 726-IPW65R080CFDAFKS		Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3
RoHS: Compliant		1401
  • 1:$10.7900
  • 10:$9.7500
  • 25:$9.3000
  • 100:$8.0800
  • 250:$7.7100
  • 500:$7.0300
IPW65R080CFDA
DISTI # 726-IPW65R080CFDA		Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3
RoHS: Compliant		158
  • 1:$10.7900
  • 10:$9.7500
  • 25:$9.3000
  • 100:$8.0800
  • 250:$7.7100
  • 500:$7.0300
IPW65R080CFDAFKSA1
DISTI # 2726080		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
RoHS: Compliant		140
  • 1:$19.8800
  • 10:$17.8900
  • 240:$14.7100
IPW65R080CFDAFKSA1
DISTI # 2726080		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
RoHS: Compliant		161
  • 1:£6.2100
  • 5:£5.5200
  • 10:£5.2400
  • 50:£5.2200
  • 100:£5.1900
IPW65R080CFDAFKSA1
DISTI # C1S322000254716		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		280
  • 240:$7.5580
  • 10:$8.8290
  • 1:$9.5990
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Verfügbarkeit
Aktie:
825
Auf Bestellung:
2808
Menge eingeben:
Der aktuelle Preis von IPW65R080CFDAFKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,78 $
10,78 $
10
9,74 $
97,40 $
25
9,29 $
232,25 $
100
8,07 $
807,00 $
250
7,70 $
1 925,00 $
500
7,02 $
3 510,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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