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STP10N62K3

STP10N62K3
Mfr. #:
STP10N62K3
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 620 V 8.4 A TO-220 TO-22
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STP10N62K3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STP10N62K3 Mehr Informationen STP10N62K3 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
8.4 A
Rds On - Drain-Source-Widerstand:
680 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
42 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Verpackung:
Rohr
Serie:
STP10N62K3
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
6 S
Abfallzeit:
31 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
41 ns
Typische Einschaltverzögerungszeit:
14.5 ns
Gewichtseinheit:
0.011640 oz
Tags
STP10N6, STP10N, STP10, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220 package
***et
Trans MOSFET N-CH 620V 8.4A 3-Pin(3+Tab) TO-220 Tube
***ponent Stockers USA
8.4 A 620 V 0.75 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 620V, 8.4A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
***icroelectronics
N-channel 600 V, 0.65 Ohm typ., 10 A, Zener-protected SuperMESH Power MOSFET in TO-220 package
***ure Electronics
N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH™ Power MosFet - TO-220
***ical
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:115W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
*** Source Electronics
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 500V 10A TO-220FP
***icroelectronics
N-channel 500 V, 0.48 Ohm typ., 10 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220 package
***ure Electronics
Single N-Channel 500 V 125 W 68 nC Silicon Through Hole Mosfet - TO-220-3
*** Electronics
STP11NK50Z STMicroelectronics MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH N-Channel Mosfet STP11NK50Z TO-220(ST)
***ark
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:125W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-channel 600 V 0.95 Ohm 125 W Through Hole SuperMESH™ Power Mosfet - TO-220
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 7A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
***emi
N-Channel Power MOSFET, UniFETTM II, 600V, 10A, 750mΩ, TO-220
***Yang
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,10A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.64ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:185W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220
***ark
MOSFET, N-CH, 800V, 10A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 10A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 6.5 A, 1.25 Ω, TO-220
***et
Trans MOSFET N-CH 600V 6.5A 3-Pin(3+Tab) TO-220 Rail
*** Stop Electro
Power Field-Effect Transistor, 6.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,6.5A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.05ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:147W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
STP10N62K3
DISTI # 497-9099-5-ND		STMicroelectronicsMOSFET N-CH 620V 8.4A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		813In Stock
  • 500:$1.3138
  • 100:$1.5991
  • 50:$1.8768
  • 10:$1.9890
  • 1:$2.2100
STP10N62K3
DISTI # 511-STP10N62K3		STMicroelectronicsMOSFET N-channel 620 V 8.4 A TO-220 TO-22
RoHS: Compliant		0
    STP10N62K3STMicroelectronics 80
      STP10N62K3STMicroelectronicsN-channel 620V,0.68, 8.4A Power MOSFET700
      • 1:$0.6100
      • 100:$0.6100
      • 500:$0.6100
      • 1000:$0.6100
      STP10N62K3
      DISTI # 2098285      		STMicroelectronicsMOSFET, N CH, 620V, 8.4A, TO220
      RoHS: Compliant      		0
      • 500:$1.9800
      • 100:$2.4100
      • 50:$2.8300
      • 10:$3.0000
      • 1:$3.3300
      Bild Teil # Beschreibung
      STP10NK80Z

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      OMO.#: OMO-STP10N105K5-STMICROELECTRONICS

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      STP10

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      STP100N10F7

      Mfr.#: STP100N10F7

      OMO.#: OMO-STP100N10F7-STMICROELECTRONICS

      		 MOSFET N CH 100V 80A TO-220
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      Mfr.#: STP1020

      OMO.#: OMO-STP1020-1190

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      STP10LCD150CFP

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      OMO.#: OMO-STP10LCD150CFP-1190

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      STP10NK60Z,P10NK60Z,10NK

      Mfr.#: STP10NK60Z,P10NK60Z,10NK

      OMO.#: OMO-STP10NK60Z-P10NK60Z-10NK-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von STP10N62K3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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