STP10N6

STP10N60M2 vs STP10N62K3 vs STP10N65K3

 
PartNumberSTP10N60M2STP10N62K3STP10N65K3
DescriptionMOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2MOSFET N-channel 620 V 8.4 A TO-220 TO-22MOSFET N-Ch Power Mosfet TO 220AB Trans
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V650 V650 V
Id Continuous Drain Current7.5 A8.4 A10 A
Rds On Drain Source Resistance560 mOhms680 mOhms750 mOhms
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V30 V-
Qg Gate Charge13.5 nC42 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation85 W125 W-
ConfigurationSingleSingleSingle
TradenameMDmesh-SuperMesh
PackagingTubeTubeTube
SeriesSTP10N60M2STP10N62K3STP10N65K3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time13.2 ns31 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time8 ns15 ns-
Factory Pack Quantity10005050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time32.5 ns41 ns-
Typical Turn On Delay Time8.8 ns14.5 ns-
Unit Weight0.011640 oz0.011640 oz0.011640 oz
Forward Transconductance Min-6 S-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STP10N60M2 MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
STP10N62K3 MOSFET N-channel 620 V 8.4 A TO-220 TO-22
STP10N65K3 MOSFET N-Ch Power Mosfet TO 220AB Trans
STP10N65K3 MOSFET N-CH 650V 10A TO220
STP10N60M2 MOSFET N-CH 600V TO-220
STP10N62K3 MOSFET N-CH 620V 8.4A TO220
STP10N60M2 10N60M2 Neu und Original
STP10N60C Neu und Original
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