KSD882YSTU

Mfr. #:: KSD882YSTU
Hersteller:: ON Semiconductor / Fairchild
Beschreibung:: Bipolar Transistors - BJT NPN Epitaxial Sil
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: KSD882YSTU Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: Bipolartransistoren - BJT

RoHS:: Y

Montageart:: Durchgangsloch

Paket / Koffer:: TO-126-3

Polarität des Transistors:: NPN

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 30 V

Kollektor- Basisspannung VCBO:: 40 V

Emitter- Basisspannung VEBO:: 5 V

Kollektor-Emitter-Sättigungsspannung:: 0.3 V

Maximaler DC-Kollektorstrom:: 3 A

Bandbreitenprodukt fT gewinnen:: 90 MHz

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: KSD882

DC-Stromverstärkung hFE Max:: 400

Höhe:: 11 mm

Länge:: 8 mm

Verpackung:: Rohr

Breite:: 3.25 mm

Marke:: ON Semiconductor / Fairchild

Kontinuierlicher Kollektorstrom:: 3 A

DC-Kollektor/Basisverstärkung hfe Min:: 60

Pd - Verlustleistung:: 10 W

Produktart:: BJTs - Bipolartransistoren

Werkspackungsmenge:: 1920

Unterkategorie:: Transistoren

Gewichtseinheit:: 0.026843 oz

Tags: KSD882YST, KSD882YS, KSD882Y, KSD882, KSD88, KSD8, KSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

KSD882YSTU Beschreibung

***ure Electronics: KSD882 Series 30 V 3 A 1 W NPN Epitaxial Silicon Transistor - TO-126

***roFlash: Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126

***Yang: Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube

*** Electronic Components: Bipolar Transistors - BJT NPN Epitaxial Sil

***ment14 APAC: Transistor, NPN, 30V, 3A, TO-126-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:90MHz; Power Dissipation

***nell: TRANSISTOR, NPN, 30V, 3A, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 90MHz; Power Dissipation Pd: 10W; DC Collector Current: 3A; DC Current Gain hFE: 160hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ca Corp: Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126

***Yang: Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Bulk - Bulk

*** Electronic Components: Bipolar Transistors - BJT NPN Epitaxial Sil

*** Electronic Components: Bipolar Transistors - BJT NPN Si Transistor Epitaxial

***ical: Trans GP BJT NPN 60V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube

***r Electronics: Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN

***eco: Transistor General Purpose BJT NPN 25 Volt 5A 3-Pin(3+Tab) TO-126

***emi: 5.0 A, 25 V NPN Bipolar Power Transistor

***ure Electronics: MJE200 Series 25 V 5 A 15 W SMT NPN Epitaxial Silicon Transistor - TO-126

***r Electronics: Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

*** Electronic Components: Bipolar Transistors - BJT NPN Epitaxial Sil

***hard Electronics: Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 20W

***ical: Trans GP BJT NPN 450V 1.5A 3-Pin TO-126 Bulk

***et: 450V NPN HIGH VOLTAGE POWER TRANSISTOR,T

***et: Bipolar (BJT) Transistor NPN 300V 100mA 100MHz 4W Through Hole TO-126-3

*** Electronic Components: Bipolar Transistors - BJT NPN Epitaxial Sil

***or: TRANS NPN 300V 100MA TO126-3

***et: Bipolar (BJT) Transistor NPN - Darlington 80V 1.5A 1W Through Hole TO-126-3

*** Electronic Components: Darlington Transistors NPN Epitaxial Sil Darl

***i-Key: TRANS NPN DARL 80V 1.5A TO-126

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
KSD882YSTU DISTI # V99:2348_06302027	ON Semiconductor	Trans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube	3811	1000:$0.1539 500:$0.1981 100:$0.1986 10:$0.3583 1:$0.4284
KSD882YSTU DISTI # V36:1790_06302027	ON Semiconductor	Trans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube	0
KSD882YSTU DISTI # KSD882YSTU-ND	ON Semiconductor	TRANS NPN 30V 3A TO-126 RoHS: Compliant Min Qty: 1 Container: Tube	3385In Stock	5760:$0.1445 3840:$0.1545 1920:$0.1694 100:$0.2790 25:$0.3488 10:$0.3740 1:$0.4400
KSD882YSTU DISTI # 31954828	ON Semiconductor	Trans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube	3811	1000:$0.1654 500:$0.2130 100:$0.2135 55:$0.3502
KSD882YSTU DISTI # KSD882YSTU	ON Semiconductor	Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail (Alt: KSD882YSTU) RoHS: Compliant Min Qty: 1	Europe - 0
KSD882YSTU DISTI # KSD882YSTU	ON Semiconductor	Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail - Bulk (Alt: KSD882YSTU) RoHS: Compliant Min Qty: 1786 Container: Bulk	Americas - 0	17860:$0.1719 8930:$0.1769 5358:$0.1789 3572:$0.1809 1786:$0.1829
KSD882YSTU DISTI # KSD882YSTU	ON Semiconductor	Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube (Alt: KSD882YSTU) RoHS: Compliant Min Qty: 1920 Container: Tube	Americas - 0	19200:$0.1379 11520:$0.1419 7680:$0.1439 3840:$0.1459 1920:$0.1469
KSD882YSTU DISTI # 46AC0936	ON Semiconductor	TRANSISTOR, NPN, 30V, 3A, TO-126-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:30V,Transition Frequency ft:90MHz,Power Dissipation Pd:10W,DC Collector Current:3A,DC Current Gain hFE:160hFE,Transistor Case RoHS Compliant: Yes	960	25000:$0.1460 10000:$0.1480 2500:$0.1590 1000:$0.1780 500:$0.2010 100:$0.2490 10:$0.4370 1:$0.5610
KSD882YSTU DISTI # 512-KSD882YSTU	ON Semiconductor	Bipolar Transistors - BJT NPN Epitaxial Sil RoHS: Compliant	3991	1:$0.4100 10:$0.3430 100:$0.2090 1000:$0.1620 2500:$0.1380
KSD882YS DISTI # 512-KSD882YS	ON Semiconductor	Bipolar Transistors - BJT NPN Epitaxial Sil RoHS: Compliant	1500	1:$0.5100 10:$0.3840 100:$0.2090 1000:$0.1570 2500:$0.1350
KSD882YSTU	Fairchild Semiconductor Corporation	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 RoHS: Compliant	25788	1000:$0.1800 500:$0.1900 100:$0.2000 25:$0.2100 1:$0.2300
KSD882YSTU DISTI # 8067177	ON Semiconductor	TRANSISTORFAIRCHILDKSD882YSTU, TU	3780	600:£0.0910 60:£0.0930
KSD882YSTU DISTI # 2825111	ON Semiconductor	TRANSISTOR, NPN, 30V, 3A, TO-126-3 RoHS: Compliant	1190	5000:$0.1770 1000:$0.1820 500:$0.1980 250:$0.2410 100:$0.2930 25:$0.4300 5:$0.5010
KSD882YSTU DISTI # 2825111	ON Semiconductor	TRANSISTOR, NPN, 30V, 3A, TO-126-3	990	500:£0.1290 250:£0.1480 100:£0.1660 25:£0.2960 5:£0.3100

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: TLV272IP OMO.#: OMO-TLV272IP	Operational Amplifiers - Op Amps 2-Ch R-R Op Amp
	Mfr.#: MCP3208-CI/P OMO.#: OMO-MCP3208-CI-P	Analog to Digital Converters - ADC 12-bit SPI 8 Chl
	Mfr.#: KSB772YSTU OMO.#: OMO-KSB772YSTU	Bipolar Transistors - BJT PNP Epitaxial Sil
	Mfr.#: KSB772YS OMO.#: OMO-KSB772YS	Bipolar Transistors - BJT PNP Epitaxial Sil
	Mfr.#: LM2577T-ADJ/NOPB OMO.#: OMO-LM2577T-ADJ-NOPB	Switching Voltage Regulators STEP-UP VLTG REG
	Mfr.#: ASI09N27M-05Q OMO.#: OMO-ASI09N27M-05Q	Audio Indicators & Alerts Audible Alarm
	Mfr.#: SJ5-43502PM OMO.#: OMO-SJ5-43502PM	Phone Connectors Audio Jacks
	Mfr.#: ASI09N27M-05Q OMO.#: OMO-ASI09N27M-05Q-MALLORY-SONALERT	Audio Indicators & Alerts Audible Alarm
	Mfr.#: SJ5-43502PM OMO.#: OMO-SJ5-43502PM-CUI	Phone Connectors Audio Jacks
	Mfr.#: 1C10Z5U104M050B OMO.#: OMO-1C10Z5U104M050B-1106	Multilayer Ceramic Capacitors MLCC - Leaded 0.1uF 50volts Z5U 20% 2.5mm L/S

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1986
Menge eingeben:

Der aktuelle Preis von KSD882YSTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,41 $~~; ~~0,41 $~~

10: ~~0,34 $~~; ~~3,43 $~~

100: ~~0,21 $~~; ~~20,90 $~~

1000: ~~0,16 $~~; ~~162,00 $~~

2500: ~~0,14 $~~; ~~345,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

KSD882YST 4
KSD882YS 6
KSD882Y 7
KSD882 19
KSD88 40
KSD8 50
KSD 597

Neueste Produkte

NCP160x and NCP161x Power Factor Controllers (PFC)

ON Semiconductor's NCP160x and NCP161x are housed in their own unique package to incorporate the features necessary for robust and compact PFC stages, with few external components and are lead
NBA3N20XS, Multi-Point, M-LVDS Drivers and Receive

ON Semiconductor’s NBA3N20xS devices are 3.3 V supply differential multi-point, low voltage (M-LVDS) line drivers and receivers for automotive applications.
Compare KSD882YSTU

KSD882YSTSSTU vs KSD882YSTSTU vs KSD882YSTU
SuperFET® II Family

ON Semiconductor's SuperFET II is suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
NTMFS5C4xx and NVMFS5C4xx 40 V Power MOSFETs

ON Semiconductor's NTMFS5C4xx and NVMFS5C4xx 40 V Power MOSFETs are capable of delivering incredibly low on state resistance, RDS(ON), values, thereby minimizing conduction losses and improvin
NCP510x High Voltage MOSFET and IGBT Gate Drivers

ON Semiconductor's NCP510x high voltage MOSFET and IGBT gate drivers provide two outputs for direct drive of two N-channel power MOSFETs or IGBTs.

More Newest Products

KSD882YSTU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes