KSD882YST stock, KSD882YST, KSD882YSTU


PartNumber	KSD882YSTU	KSD882YSTSSTU	KSD882YSTSTU
Description	Bipolar Transistors - BJT NPN Epitaxial Sil	Bipolar Transistors - BJT NPN Epitaxial Sil	TRANS NPN 30V 3A TO-126
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-126-3	TO-126-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	30 V	30 V	-
Collector Base Voltage VCBO	40 V	40 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	0.3 V	0.3 V	-
Maximum DC Collector Current	3 A	3 A	-
Gain Bandwidth Product fT	90 MHz	90 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	KSD882	-	-
DC Current Gain hFE Max	400	400	-
Height	11 mm	11 mm	-
Length	8 mm	8 mm	-
Packaging	Tube	Tube	-
Width	3.25 mm	3.25 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
Continuous Collector Current	3 A	3 A	-
DC Collector/Base Gain hfe Min	60	60	-
Pd Power Dissipation	10 W	10 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	1920	60	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.026843 oz	0.026843 oz	-

Search Part Number : "KSD882YST", Match & Start with "KSD882YST" - Total : 6

Hersteller	Teil #	Beschreibung
ON Semiconductor / Fairchild	KSD882YSTU	Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor / Fairchild	KSD882YSTSSTU	Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor	KSD882YSTSTU	TRANS NPN 30V 3A TO-126
	KSD882YSTU	TRANS NPN 30V 3A TO-126
	KSD882YSTSSTU	TRANS NPN 30V 3A TO-126
	KSD882YSTU,KSD882-Y,D882	Neu und Original

KSD882YST