IPB031N08N5ATMA1

Mfr. #:: IPB031N08N5ATMA1
Hersteller:: Infineon Technologies
Beschreibung:: RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB031N08N5ATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IPB031N08N5ATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Infineon-Technologien

Produktkategorie: Transistoren - FETs, MOSFETs - Single

Verpackung: Spule

Teil-Aliasnamen: IPB031N08N5 SP001227048

Gewichtseinheit: 0.139332 oz

Montageart: SMD/SMT

Paket-Koffer: TO-263-3

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 167 W

Maximale-Betriebstemperatur: + 175 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 12 ns

Anstiegszeit: 18 ns

Vgs-Gate-Source-Spannung: +/- 20 V

ID-Dauer-Drain-Strom: 120 A

Vds-Drain-Source-Breakdown-Voltage: 80 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Widerstand: 4.1 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 37 ns

Typische-Einschaltverzögerungszeit: 18 ns

Qg-Gate-Ladung: 69 nC

Vorwärts-Transkonduktanz-Min: 76 S

Kanal-Modus: Erweiterung

Tags: IPB031, IPB03, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB031N08N5ATMA1 Beschreibung

***ical: Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

***ark: Mosfet, N-Ch, 80V, 120A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPB031N08N5ATMA1 Mehr Informationen

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB031N08N5ATMA1 DISTI # V72:2272_06383299	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	86	25:$2.1290 10:$2.1340 1:$2.4370
IPB031N08N5ATMA1 DISTI # IPB031N08N5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1857In Stock	500:$1.9767 100:$2.4411 10:$2.9770 1:$3.3300
IPB031N08N5ATMA1 DISTI # IPB031N08N5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1857In Stock	500:$1.9767 100:$2.4411 10:$2.9770 1:$3.3300
IPB031N08N5ATMA1 DISTI # IPB031N08N5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$1.6185
IPB031N08N5ATMA1 DISTI # 30577658	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	500:$2.1165 100:$2.4225 50:$2.5882 10:$3.0728 8:$3.6082
IPB031N08N5ATMA1 DISTI # 26885774	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	86	25:$2.1290 10:$2.1340 5:$2.4370
IPB031N08N5ATMA1 DISTI # IPB031N08N5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB031N08N5ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.4900 2000:$1.3900 4000:$1.3900 6000:$1.2900 10000:$1.2900
IPB031N08N5ATMA1 DISTI # SP001227048	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP001227048) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.6900 2000:€1.3900 4000:€1.2900 6000:€1.1900 10000:€1.0900
IPB031N08N5ATMA1 DISTI # 13AC9025	Infineon Technologies AG	MOSFET, N-CH, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	1:$2.7900 10:$2.3700 25:$2.2600 50:$2.1600 100:$2.0500 250:$1.9500 500:$1.7500
IPB031N08N5 DISTI # 726-IPB031N08N5	Infineon Technologies AG	MOSFET N-Ch 80V 120A D2PAK-2 RoHS: Compliant	0	1:$2.7900 10:$2.3700 100:$2.0500 250:$1.9500 500:$1.7500 1000:$1.4800
IPB031N08N5ATMA1 DISTI # 726-IPB031N08N5ATMA1	Infineon Technologies AG	MOSFET N-Ch 80V 120A D2PAK-2 RoHS: Compliant	0	1:$2.7900 10:$2.3700 100:$2.0500 250:$1.9500 500:$1.7500 1000:$1.4800
IPB031N08N5ATMA1 DISTI # C1S322000644751	Infineon Technologies AG	MOSFETs	86	25:$2.1290 10:$2.1340 1:$2.4370
IPB031N08N5ATMA1 DISTI # C1S322000456855	Infineon Technologies AG	MOSFETs	1000	1000:$1.3800 500:$1.6600 100:$1.9000 50:$2.0300 10:$2.4100 1:$2.8300
IPB031N08N5ATMA1 DISTI # 2725838	Infineon Technologies AG	MOSFET, N-CH, 80V, 120A, TO-263 RoHS: Compliant	0	1:£2.4000 10:£1.8100 100:£1.5700 250:£1.4900 500:£1.3400
IPB031N08N5ATMA1 DISTI # 2725838	Infineon Technologies AG	MOSFET, N-CH, 80V, 120A, TO-263 RoHS: Compliant	0	1:$3.1100 10:$2.9100 100:$2.5800 500:$2.4400

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB031N08N5 OMO.#: OMO-IPB031N08N5	MOSFET N-Ch 80V 120A D2PAK-2
	Mfr.#: IPB031N08N5ATMA1 OMO.#: OMO-IPB031N08N5ATMA1	MOSFET N-Ch 80V 120A D2PAK-2
	Mfr.#: IPB031N08N5 OMO.#: OMO-IPB031N08N5-1190	MOSFET N-Ch 80V 120A D2PAK-2
	Mfr.#: IPB031N08N5ATMA1 OMO.#: OMO-IPB031N08N5ATMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von IPB031N08N5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,84 $~~; ~~1,84 $~~

10: ~~1,75 $~~; ~~17,48 $~~

100: ~~1,66 $~~; ~~165,65 $~~

500: ~~1,56 $~~; ~~782,20 $~~

1000: ~~1,47 $~~; ~~1 472,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPB031N08N5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes