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SI2301BDS-T1-GE3

SI2301BDS-T1-GE3
Mfr. #:
SI2301BDS-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2301BDS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2301BDS-T1-GE3 DatasheetSI2301BDS-T1-GE3 Datasheet (P4-P6)SI2301BDS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI2301BDS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
2.2 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs th - Gate-Source-Schwellenspannung:
450 mV
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
4.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
0.7 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.45 mm
Länge:
2.9 mm
Serie:
SI2
Transistortyp:
1 P-Channel
Breite:
1.6 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
6.5 S
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
40 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
20 ns
Teil # Aliase:
SI2301BDS-GE3
Gewichtseinheit:
0.000282 oz
Tags
SI2301BDS-T1, SI2301BDS-T, SI2301BD, SI2301B, SI2301, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
***et Europe
Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 20V 2.2A SOT23-3
***ure Electronics
P-CHANNEL 2.5-V (G-S) MOSFET
***nell
P CHANNEL MOSFET
***ark
P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW ;RoHS Compliant: Yes
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2301BDS-T1-GE3
DISTI # V72:2272_09216783		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 1000:$0.1492
  • 500:$0.1928
  • 250:$0.2120
  • 100:$0.2356
  • 25:$0.2847
  • 10:$0.3164
  • 1:$0.4180
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4759In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4759In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.1875
SI2301BDS-T1-GE3
DISTI # 28976274		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 1000:$0.1492
  • 500:$0.1928
  • 250:$0.2120
  • 100:$0.2356
  • 57:$0.2847
SI2301BDS-T1-GE3
DISTI # 84R8020		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Power Dissipation Pd:700mW, RoHS Compliant: Yes0
  • 1:$0.4400
  • 25:$0.3330
  • 50:$0.2910
  • 100:$0.2480
  • 250:$0.2260
  • 500:$0.2030
  • 1000:$0.1570
SI2301BDS-T1-GE3
DISTI # 33P5162		Vishay IntertechnologiesP CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Product Range:-, RoHS Compliant: Yes0
  • 1:$0.1630
  • 3000:$0.1620
  • 6000:$0.1540
  • 12000:$0.1370
SI2301BDS-T1-GE3
DISTI # 781-SI2301BDS-GE3		Vishay IntertechnologiesMOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
RoHS: Compliant		10356
  • 1:$0.4400
  • 10:$0.3330
  • 100:$0.2480
  • 500:$0.2030
  • 1000:$0.1570
  • 3000:$0.1430
  • 6000:$0.1340
  • 9000:$0.1250
SI2301BDS-T1-GE3
DISTI # 1867173		Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant		0
  • 3000:£0.1390
SI2301BDS-T1-GE3
DISTI # C1S803601819123		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 250:$0.2120
  • 100:$0.2356
  • 25:$0.2847
  • 10:$0.3164
Bild Teil # Beschreibung
W25Q16JVSNIQ TR

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Mfr.#: MCP1700T-3002E/MB

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OMO.#: OMO-614105150721

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Mfr.#: 885012208002

OMO.#: OMO-885012208002

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MCP1700T-3002E/MB

Mfr.#: MCP1700T-3002E/MB

OMO.#: OMO-MCP1700T-3002E-MB-MICROCHIP-TECHNOLOGY

 LDO Voltage Regulators 250mA Adj LDO 2%
CGA2B1X7R1C104M050BC

Mfr.#: CGA2B1X7R1C104M050BC

OMO.#: OMO-CGA2B1X7R1C104M050BC-TDK

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614105150721

Mfr.#: 614105150721

OMO.#: OMO-614105150721-WURTH-ELECTRONICS

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TPS613221ADBVR

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OMO.#: OMO-TPS613221ADBVR-TEXAS-INSTRUMENTS

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Verfügbarkeit
Aktie:
12
Auf Bestellung:
1995
Menge eingeben:
Der aktuelle Preis von SI2301BDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,52 $
0,52 $
10
0,40 $
3,97 $
100
0,29 $
29,40 $
500
0,24 $
121,00 $
1000
0,19 $
187,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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