SI2301BDS-T1

SI2301BDS-T1-E3 vs SI2301BDS-T1 vs SI2301BDS-T1-E3 , MAX630

 
PartNumberSI2301BDS-T1-E3SI2301BDS-T1SI2301BDS-T1-E3 , MAX630
DescriptionMOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
ManufacturerVishayVISHAY-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.4 A--
Rds On Drain Source Resistance100 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation900 mW--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.45 mm--
Length2.9 mm--
SeriesSI2--
Transistor Type1 P-Channel--
Width1.6 mm--
BrandVishay / Siliconix--
Forward Transconductance Min6.5 S--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time20 ns--
Part # AliasesSI2301BDS-E3--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2301BDS-T1-GE3 MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
SI2301BDS-T1-E3 MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
SI2301BDS-T1 MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
SI2301BDS-T1-E3 , MAX630 Neu und Original
SI2301BDS-T1-ES Neu und Original
SI2301BDS-T1-GE3 , MAX63 Neu und Original
SI2301BDS-T1-E3-CUT TAPE Neu und Original
Vishay
Vishay
SI2301BDS-T1-E3 MOSFET P-CH 20V 2.2A SOT23-3
SI2301BDS-T1-GE3 MOSFET P-CH 20V 2.2A SOT23-3
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