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SI2301BDS-T1-GE3

SI2301BDS-T1-GE3
Mfr. #:
SI2301BDS-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 20V 2.2A SOT23-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2301BDS-T1-GE3 Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
SI2301BDS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI2301BDS-GE3
Gewichtseinheit
0.050717 oz
Montageart
SMD/SMT
Paket-Koffer
SOT-23-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
700 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
40 ns
Anstiegszeit
40 ns
Vgs-Gate-Source-Spannung
8 V
ID-Dauer-Drain-Strom
2.2 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Rds-On-Drain-Source-Widerstand
100 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
30 ns
Typische-Einschaltverzögerungszeit
20 ns
Kanal-Modus
Erweiterung
Tags
SI2301BDS-T1, SI2301BDS-T, SI2301BD, SI2301B, SI2301, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
***et Europe
Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 20V 2.2A SOT23-3
***ure Electronics
P-CHANNEL 2.5-V (G-S) MOSFET
***nell
P CHANNEL MOSFET
***ark
P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW ;RoHS Compliant: Yes
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-950mV; Power Dissipation Pd:700mW
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2301BDS-T1-GE3
DISTI # V72:2272_09216783		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 1000:$0.1492
  • 500:$0.1928
  • 250:$0.2120
  • 100:$0.2356
  • 25:$0.2847
  • 10:$0.3164
  • 1:$0.4180
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4759In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4759In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2301BDS-T1-GE3
DISTI # SI2301BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.1875
SI2301BDS-T1-GE3
DISTI # 28976274		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 1000:$0.1492
  • 500:$0.1928
  • 250:$0.2120
  • 100:$0.2356
  • 57:$0.2847
SI2301BDS-T1-GE3
DISTI # 84R8020		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Power Dissipation Pd:700mW, RoHS Compliant: Yes0
  • 1:$0.4400
  • 25:$0.3330
  • 50:$0.2910
  • 100:$0.2480
  • 250:$0.2260
  • 500:$0.2030
  • 1000:$0.1570
SI2301BDS-T1-GE3
DISTI # 33P5162		Vishay IntertechnologiesP CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):80mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-950mV,Product Range:-, RoHS Compliant: Yes0
  • 1:$0.1630
  • 3000:$0.1620
  • 6000:$0.1540
  • 12000:$0.1370
SI2301BDS-T1-GE3
DISTI # 781-SI2301BDS-GE3		Vishay IntertechnologiesMOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
RoHS: Compliant		10356
  • 1:$0.4400
  • 10:$0.3330
  • 100:$0.2480
  • 500:$0.2030
  • 1000:$0.1570
  • 3000:$0.1430
  • 6000:$0.1340
  • 9000:$0.1250
SI2301BDS-T1-GE3
DISTI # 1867173		Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant		0
  • 3000:£0.1390
SI2301BDS-T1-GE3
DISTI # C1S803601819123		Vishay IntertechnologiesTrans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2495
  • 250:$0.2120
  • 100:$0.2356
  • 25:$0.2847
  • 10:$0.3164
Bild Teil # Beschreibung
SI2301BDS-T1-E3

Mfr.#: SI2301BDS-T1-E3

OMO.#: OMO-SI2301BDS-T1-E3

 MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
SI2301BDS

Mfr.#: SI2301BDS

OMO.#: OMO-SI2301BDS-1190

 P CHANNEL MOSFET, FULL REEL
SI2301BDS-T-E3

Mfr.#: SI2301BDS-T-E3

OMO.#: OMO-SI2301BDS-T-E3-1190

 Neu und Original
SI2301BDS-T1-E3 , MAX630

Mfr.#: SI2301BDS-T1-E3 , MAX630

OMO.#: OMO-SI2301BDS-T1-E3-MAX630-1190

 Neu und Original
SI2301BDS-T1-ES

Mfr.#: SI2301BDS-T1-ES

OMO.#: OMO-SI2301BDS-T1-ES-1190

 Neu und Original
SI2301BDS-T1-GE3 , MAX63

Mfr.#: SI2301BDS-T1-GE3 , MAX63

OMO.#: OMO-SI2301BDS-T1-GE3-MAX63-1190

 Neu und Original
SI2301BDS-TI

Mfr.#: SI2301BDS-TI

OMO.#: OMO-SI2301BDS-TI-1190

 Neu und Original
SI2301BDS-TI-E3

Mfr.#: SI2301BDS-TI-E3

OMO.#: OMO-SI2301BDS-TI-E3-1190

 Neu und Original
SI2301BDS-T1-E3-CUT TAPE

Mfr.#: SI2301BDS-T1-E3-CUT TAPE

OMO.#: OMO-SI2301BDS-T1-E3-CUT-TAPE-1190

 Neu und Original
SI2301BDS-T1-GE3

Mfr.#: SI2301BDS-T1-GE3

OMO.#: OMO-SI2301BDS-T1-GE3-VISHAY

 MOSFET P-CH 20V 2.2A SOT23-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von SI2301BDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,14 $
0,14 $
10
0,13 $
1,31 $
100
0,12 $
12,41 $
500
0,12 $
58,60 $
1000
0,11 $
110,30 $
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