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FCP165N60E

FCP165N60E
Mfr. #:
FCP165N60E
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V 23A N-Chnl SuperFET Easy-Drive
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCP165N60E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FCP165N60E Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
23 A
Rds On - Drain-Source-Widerstand:
165 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V, 30 V
Qg - Gate-Ladung:
57 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
227 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperFET II
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FCP165N60E
Transistortyp:
1 N-Channel
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
20 S
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
100 ns
Typische Einschaltverzögerungszeit:
22 ns
Gewichtseinheit:
0.063493 oz
Tags
FCP165, FCP16, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 23A, 165mΩ, TO-220
***ark
SuperFET2 600V 165mohm slow version - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220
***et
Trans MOSFET N-CH 600V 23A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V TO220
***et Europe
SUPERFET2 600V 165MOHM SLOW VERSION
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 23A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.132ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:227W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 23A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.132ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FCP165N60E
DISTI # V99:2348_14141720		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VE691
  • 800:$1.6660
  • 100:$2.0030
  • 25:$2.2630
  • 10:$2.2860
  • 1:$2.9832
FCP165N60E
DISTI # FCP165N60E-ND		ON SemiconductorMOSFET N-CH 600V 23A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		800In Stock
  • 800:$1.7984
  • 100:$2.1126
  • 25:$2.4376
  • 10:$2.5780
  • 1:$2.8700
FCP165N60E
DISTI # 25887488		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VE691
  • 5:$2.9832
FCP165N60E
DISTI # FCP165N60E		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VERSION (Alt: FCP165N60E)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 50:€1.2900
  • 100:€1.2900
  • 500:€1.2900
  • 1000:€1.2900
  • 25:€1.3900
  • 10:€1.4900
  • 1:€1.7900
FCP165N60E
DISTI # FCP165N60E		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VERSION - Rail/Tube (Alt: FCP165N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$1.1900
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
FCP165N60E
DISTI # 84Y5816		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.132ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes666
  • 500:$1.7300
  • 250:$1.9200
  • 100:$2.0300
  • 50:$2.1300
  • 25:$2.2400
  • 10:$2.3400
  • 1:$2.7600
FCP165N60E
DISTI # 512-FCP165N60E		ON SemiconductorMOSFET 600V 23A N-Chnl SuperFET Easy-Drive
RoHS: Compliant		95
  • 1:$2.7300
  • 10:$2.3200
  • 100:$2.0100
  • 250:$1.9000
  • 500:$1.7100
  • 1000:$1.4400
  • 2500:$1.3700
  • 5000:$1.3200
FCP165N60E
DISTI # 2565218		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3
RoHS: Compliant		666
  • 800:$2.6100
  • 100:$3.5600
  • 10:$4.3400
  • 1:$4.8600
FCP165N60E
DISTI # 2565218		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3696
  • 500:£1.1700
  • 250:£1.3100
  • 100:£1.3900
  • 10:£1.5900
  • 1:£2.1200
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Verfügbarkeit
Aktie:
95
Auf Bestellung:
2078
Menge eingeben:
Der aktuelle Preis von FCP165N60E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,73 $
2,73 $
10
2,32 $
23,20 $
100
2,01 $
201,00 $
250
1,90 $
475,00 $
500
1,71 $
855,00 $
1000
1,44 $
1 440,00 $
2500
1,37 $
3 425,00 $
5000
1,32 $
6 600,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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