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SPW55N80C3FKSA1

SPW55N80C3FKSA1
Mfr. #:
SPW55N80C3FKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 850V 54.9A TO247-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPW55N80C3FKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SPW55N80C3FKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
54.9 A
Rds On - Drain-Source-Widerstand:
77 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
288 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
500 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
21.1 mm
Länge:
16.13 mm
Serie:
CoolMOS C3
Transistortyp:
1 N-Channel
Breite:
5.21 mm
Marke:
Infineon-Technologien
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
21 ns
Werkspackungsmenge:
240
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
200 ns
Typische Einschaltverzögerungszeit:
45 ns
Teil # Aliase:
SP000849356 SPW55N80C3 SPW55N8C3XK
Gewichtseinheit:
1.340411 oz
Tags
SPW55, SPW5, SPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 85 mOhm 285 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:850V; Continuous Drain Current Id:54.9A; On Resistance Rds(On):0.077Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
SPW55N80C3FKSA1
DISTI # V99:2348_06378036		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		235
  • 720:$9.8580
  • 240:$11.3450
  • 25:$12.8690
  • 10:$13.4220
  • 1:$14.5870
SPW55N80C3FKSA1
DISTI # V36:1790_06378036		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$8.1290
  • 120000:$8.1360
  • 24000:$9.1960
  • 2400:$11.5200
  • 240:$11.9400
SPW55N80C3FKSA1
DISTI # SPW55N80C3FKSA1-ND		Infineon Technologies AGMOSFET N-CH 800V 54.9A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		47In Stock
  • 720:$10.6252
  • 240:$11.9442
  • 25:$13.5564
  • 10:$14.1430
  • 1:$15.3900
SPW55N80C3FKSA1
DISTI # 33368643		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		1086
  • 2:$8.7409
SPW55N80C3FKSA1
DISTI # 33142793		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 240:$14.6406
SPW55N80C3FKSA1
DISTI # 33157361		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		235
  • 1:$14.5870
SPW55N80C3XK
DISTI # SPW55N80C3FKSA1		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: SPW55N80C3FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$8.7900
  • 1440:$8.9900
  • 960:$9.2900
  • 480:$9.5900
  • 240:$9.9900
SPW55N80C3FKSA1
DISTI # 85X7431		Infineon Technologies AGMOSFET Transistor, N Channel, 54.9 A, 850 V, 0.077 ohm, 10 V, 3 V RoHS Compliant: Yes0
  • 500:$10.2100
  • 250:$10.9200
  • 100:$11.4800
  • 50:$12.2600
  • 25:$13.0400
  • 10:$13.6000
  • 1:$14.8000
SPW55N80C3FKSA1.
DISTI # 28AC3069		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:54.9A,Drain Source Voltage Vds:850V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:500W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 500:$10.2100
  • 250:$10.9200
  • 100:$11.4800
  • 50:$12.2600
  • 25:$13.0400
  • 10:$13.6000
  • 1:$14.8000
SPW55N80C3FKSA1
DISTI # 726-SPW55N80C3FKSA1		Infineon Technologies AGMOSFET N-Ch 850V 54.9A TO247-3
RoHS: Compliant		231
  • 1:$14.6500
  • 10:$13.4700
  • 25:$12.9100
  • 100:$11.3700
  • 250:$10.8100
  • 500:$10.1100
SPW55N80C3
DISTI # 726-SPW55N80C3		Infineon Technologies AGMOSFET N-Ch 850V 54.9A TO247-3
RoHS: Compliant		0
  • 1:$14.6500
  • 10:$13.4700
  • 25:$12.9100
  • 100:$11.3700
  • 250:$10.8100
  • 500:$10.1100
SPW55N80C3FKSA1Infineon Technologies AGSingle N-Channel 800 V 85 mOhm 285 nC CoolMOS Power Mosfet - TO-247-3
RoHS: Compliant		240Tube
  • 240:$10.4100
SPW55N80C3FKSA1
DISTI # 8977677P		Infineon Technologies AGMOSFET N-CHANNEL 850V 54.9A TO247, TU194
  • 15:£10.2700
  • 6:£10.9700
SPW55N80C3FKSA1
DISTI # 8977677		Infineon Technologies AGMOSFET N-CHANNEL 850V 54.9A TO247, EA27
  • 15:£10.2700
  • 6:£10.9700
  • 1:£12.4900
SPW55N80C3FKSA1
DISTI # 2443414		Infineon Technologies AGMOSFET, N CH, 850V, 54.9A, TO-247-3203
  • 100:£8.8600
  • 50:£9.4500
  • 10:£10.0500
  • 5:£11.3900
  • 1:£11.8300
SPW55N80C3FKSA1
DISTI # 2443414		Infineon Technologies AGMOSFET, N CH, 850V, 54.9A, TO-247-3
RoHS: Compliant		191
  • 500:$15.2400
  • 250:$16.2900
  • 100:$17.1300
  • 25:$19.4600
  • 10:$20.3000
  • 1:$22.0800
SPW55N80C3FKSA1
DISTI # XSKDRABV0051999		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$12.2300
  • 240:$13.1000
Bild Teil # Beschreibung
UCC27511ADBVR

Mfr.#: UCC27511ADBVR

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Mfr.#: 5800-102-RC

OMO.#: OMO-5800-102-RC-BOURNS

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OMO.#: OMO-UCC27511ADBVR-TEXAS-INSTRUMENTS

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OMO.#: OMO-FFSH5065A-F155-1190

 SIC DIODE TO247 650V
Verfügbarkeit
Aktie:
219
Auf Bestellung:
2202
Menge eingeben:
Der aktuelle Preis von SPW55N80C3FKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
14,65 $
14,65 $
10
13,47 $
134,70 $
25
12,91 $
322,75 $
100
11,37 $
1 137,00 $
250
10,81 $
2 702,50 $
500
10,11 $
5 055,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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