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| PartNumber | SPW55N80C3 | SPW55N80C3,55N80C3 | SPW55N80C3,55N80C3, |
| Description | MOSFET N-Ch 850V 54.9A TO247-3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 54.9 A | - | - |
| Rds On Drain Source Resistance | 77 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 288 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 500 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | XPW55N80 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21 ns | - | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 200 ns | - | - |
| Typical Turn On Delay Time | 45 ns | - | - |
| Part # Aliases | SP000849356 SPW55N80C3FKSA1 SPW55N8C3XK | - | - |
| Unit Weight | 1.340411 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
SPW55N80C3FKSA1 | MOSFET N-Ch 850V 54.9A TO247-3 | |
| SPW55N80C3 | MOSFET N-Ch 850V 54.9A TO247-3 | ||
| SPW55N80C3FKSA1 | MOSFET N-CH 800V 54.9A TO-247 | ||
| SPW55N80C3 | Trans MOSFET N-CH 850V 54.9A 3-Pin TO-247 Tube (Alt: SP000849356) | ||
| SPW55N80C3,55N80C3 | Neu und Original | ||
| SPW55N80C3,55N80C3, | Neu und Original |