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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSP320SL6327HTSA1 DISTI # BSP320SL6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP320SL6327HTSA1 DISTI # BSP320SL6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP320SL6327HTSA1 DISTI # BSP320SL6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP320S L6327 DISTI # 726-BSP320SL6327 | Infineon Technologies AG | MOSFET N-Ch 60V 2.9A SOT-223-3 RoHS: Compliant | 0 | |
| BSP320SL6327 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2900 |
|
| BSP320SL6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 87000 |
|
| BSP320SL6327 | Infineon Technologies AG | 785 | ||
| BSP320SL6327 | Infineon Technologies AG | 60V,2.9A,N channel Power MOSFET | 700 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSP320SH6433XTMA1 OMO.#: OMO-BSP320SH6433XTMA1 |
MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A |
|
Mfr.#: BSP320S H6327 OMO.#: OMO-BSP320S-H6327-1190 |
MOSFET N-Ch 60V 2.9A SOT-223-3 |
|
|
Mfr.#: BSP320SH6327 OMO.#: OMO-BSP320SH6327-1190 |
60V,120m,2.9A,N-Ch Small-Signal MOSFET |
|
|
Mfr.#: BSP320S L6327 , TEA1892T |
Neu und Original |
|
|
Mfr.#: BSP320S,L6327 OMO.#: OMO-BSP320S-L6327-1190 |
Neu und Original |
|
|
Mfr.#: BSP320SL6327 OMO.#: OMO-BSP320SL6327-1190 |
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP320SL6327HTSA1375 |
Neu und Original |
|
|
Mfr.#: BSP320SL6433 OMO.#: OMO-BSP320SL6433-1190 |
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP320S L6327 OMO.#: OMO-BSP320S-L6327-126 |
IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3 |
|
|
Mfr.#: BSP320S L6433 OMO.#: OMO-BSP320S-L6433-126 |
IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3 |