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IRF1018ESPBF

IRF1018ESPBF
Mfr. #:
IRF1018ESPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF1018ESPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF1018ESPBF DatasheetIRF1018ESPBF Datasheet (P4-P6)IRF1018ESPBF Datasheet (P7-P9)IRF1018ESPBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
79 A
Rds On - Drain-Source-Widerstand:
7.1 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
46 nC
Pd - Verlustleistung:
110 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001561450
Gewichtseinheit:
0.139332 oz
Tags
IRF1018ES, IRF1018, IRF101, IRF10, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;D2Pak;PD 110W;VGS +/-20
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:79A; On Resistance, Rds(on):8.4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRF1018ESPBF
DISTI # IRF1018ESPBF-ND		Infineon Technologies AGMOSFET N-CH 60V 79A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    IRF1018ESPBF
    DISTI # SP001561450    		Infineon Technologies AGTrans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK (Alt: SP001561450)
    RoHS: Compliant
    Min Qty: 1    		Europe - 50
    • 1:€1.3129
    • 10:€1.1219
    • 25:€1.1189
    • 50:€1.1169
    • 100:€0.8639
    • 500:€0.7579
    • 1000:€0.5969
    IRF1018ESPBF
    DISTI # 70017887    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 79A,D2Pak,PD 110W,VGS +/-20
    RoHS: Compliant    		0
    • 5:$2.0400
    IRF1018ESPBF
    DISTI # 942-IRF1018ESPBF    		Infineon Technologies AGMOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
    RoHS: Compliant    		91
    • 1:$1.5300
    • 10:$1.3100
    • 100:$1.0100
    • 500:$0.8860
    • 1000:$0.6990
    IRF1018ESPBFInternational Rectifier 
    RoHS: Not Compliant    		400
    • 1000:$0.4200
    • 500:$0.4400
    • 100:$0.4600
    • 25:$0.4800
    • 1:$0.5200
    IRF1018ESPBF
    DISTI # 6886803    		Infineon Technologies AGMOSFET N-CHANNEL 60V 79A HEXFET D2PAK, PK625
    • 5:£1.1860
    • 25:£0.9420
    • 50:£0.8360
    • 100:£0.7320
    IRF1018ESPBF
    DISTI # IRF1018ESPBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,79A,110W,D2PAK1
    • 1:$0.8100
    • 3:$0.7300
    • 10:$0.6000
    • 100:$0.5400
    IRF1018ESPBF
    DISTI # IRF1018ESPBF    		Infineon Technologies AGN-Ch 60V 79A 110W 0,0084R DPak
    RoHS: Compliant    		0
    • 10:€0.6710
    • 50:€0.4310
    • 200:€0.3710
    • 500:€0.3570
    IRF1018ESTRLPBF
    DISTI # IRF1018ESPBF-GURT    		Infineon Technologies AGN-Ch 60V 79A 110W 0,0084R DPak
    RoHS: Compliant    		860
    • 10:€0.6630
    • 50:€0.4230
    • 200:€0.3630
    • 500:€0.3495
    IRF1018ESPBF
    DISTI # 1602225    		Infineon Technologies AGMOSFET, N, D2-PAK
    RoHS: Compliant    		0
    • 1:$2.4300
    • 10:$2.0700
    • 100:$1.6000
    • 500:$1.4100
    • 1000:$1.1100
    Bild Teil # Beschreibung
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    Mfr.#: CRCW08051M00FKEAC

    OMO.#: OMO-CRCW08051M00FKEAC

    		 Thick Film Resistors - SMD 1/8Watt 1Mohms 1% Commercial Use
    RC0603JR-07100RL

    Mfr.#: RC0603JR-07100RL

    OMO.#: OMO-RC0603JR-07100RL

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    RC1206JR-0710RL

    Mfr.#: RC1206JR-0710RL

    OMO.#: OMO-RC1206JR-0710RL

    		 Thick Film Resistors - SMD 10 OHM 5%
    MAX98357AETE+T

    Mfr.#: MAX98357AETE+T

    OMO.#: OMO-MAX98357AETE-T-MAXIM-INTEGRATED

    		 Audio Amplifiers Digital Input Class D Amplifie
    HCPL-3150-500E

    Mfr.#: HCPL-3150-500E

    OMO.#: OMO-HCPL-3150-500E-BROADCOM

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    Mfr.#: LM293DR

    OMO.#: OMO-LM293DR-TEXAS-INSTRUMENTS

    		 IC COMPARATOR DIFF DUAL 8SOIC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von IRF1018ESPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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