IRF1018ES

IRF1018ESTRLPBF vs IRF1018ESPBF vs IRF1018ESLPBF

 
PartNumberIRF1018ESTRLPBFIRF1018ESPBFIRF1018ESLPBF
DescriptionMOSFET MOSFT 60V 79A 8.4mOhm 46nC QgMOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nCMOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CaseTO-263-3TO-263-3TO-262-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current79 A79 A79 A
Rds On Drain Source Resistance7.1 mOhms7.1 mOhms8.4 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge46 nC46 nC46 nC
Pd Power Dissipation110 W110 W110 W
ConfigurationSingleSingleSingle
PackagingReelTubeTube
Height4.4 mm4.4 mm9.45 mm
Length10 mm10 mm10.2 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm9.25 mm4.5 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon / IR
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity800100050
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesSP001564496SP001561450SP001550908
Unit Weight0.139332 oz0.139332 oz0.073511 oz
Vgs th Gate Source Threshold Voltage--4 V
Minimum Operating Temperature--- 55 C
Maximum Operating Temperature--+ 175 C
Forward Transconductance Min--110 S
Fall Time--46 ns
Rise Time--35 ns
Typical Turn Off Delay Time--55 ns
Typical Turn On Delay Time--13 ns
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRF1018ESTRLPBF MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg
IRF1018ESLPBF MOSFET N-CH 60V 79A TO-262
IRF1018ESTRLPBF MOSFET N-CH 60V 79A D2PAK
IRF1018ESPBF Darlington Transistors MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
Infineon Technologies
Infineon Technologies
IRF1018ESPBF MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
Infineon / IR
Infineon / IR
IRF1018ESLPBF MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
IRF1018ESTRLPBF-CUT TAPE Neu und Original
IRF1018ESTRLPBF. N CH MOSFET, HEXFET, 60V, 79A, D2PAK
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