PartNumber | IRF1018ESTRLPBF | IRF1018ESPBF | IRF1018ESLPBF |
Description | MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg | MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC | MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Package / Case | TO-263-3 | TO-263-3 | TO-262-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 79 A | 79 A | 79 A |
Rds On Drain Source Resistance | 7.1 mOhms | 7.1 mOhms | 8.4 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 46 nC | 46 nC | 46 nC |
Pd Power Dissipation | 110 W | 110 W | 110 W |
Configuration | Single | Single | Single |
Packaging | Reel | Tube | Tube |
Height | 4.4 mm | 4.4 mm | 9.45 mm |
Length | 10 mm | 10 mm | 10.2 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm | 4.5 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon / IR |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 800 | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SP001564496 | SP001561450 | SP001550908 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.073511 oz |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 175 C |
Forward Transconductance Min | - | - | 110 S |
Fall Time | - | - | 46 ns |
Rise Time | - | - | 35 ns |
Typical Turn Off Delay Time | - | - | 55 ns |
Typical Turn On Delay Time | - | - | 13 ns |