OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

NTMS4802NR2G

NTMS4802NR2G
Mfr. #:
NTMS4802NR2G
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors MOSFET 30V 13.6A N-CH 0.009OHM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NTMS4802NR2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMS4802NR2G DatasheetNTMS4802NR2G Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
AN
Produktkategorie
FETs - Einzeln
Tags
NTMS480, NTMS48, NTMS4, NTMS, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Single N-Channel Power MOSFET 30V, 18A, 4mΩ
***Yang
Trans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R - Tape and Reel
***ure Electronics
N-Channel 30 V 2.1 mOhm 1.7 W Surface Mount Power Mosfet - SO-8
***th Star Micro
Power MOSFET 30 V 18 A N Channel SOIC8
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):3.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ark
Mosfet Transistor, N Channel, 21 A, 30 V, 3.7 Mohm, 10 V, 5.4 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.7Milliohms;ID 21A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.4V; Power Dissipation P
*** Stop Electro
Power Field-Effect Transistor, 21A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
***roFlash
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.32V; Power Dissi
***et
Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:105A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This device has been designed specifically to improvethe efficiency of DC-DC converters. Using newtechniques in MOSFET construction, the variouscomponents of gate charge and capacitance have beenoptimized to reduce switching losses. Low gateresistance and very low Miller charge enable excellentperformance with both adaptive and fixed dead timegate drive circuits. Very low Rds(on) has beenmaintained to provide an extremely versatile device.
***ure Electronics
N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ
***Yang
Trans MOSFET N-CH 30V 18.5A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***ure Electronics
N-Channel 30 V 3.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,21A I(D),SO
***et Europe
Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm;
***rchild Semiconductor
The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
***nell
MOSFET, N, SMD, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.5mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 21A; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 106A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Teil # Mfg. Beschreibung Aktie Preis
NTMS4802NR2G
DISTI # NTMS4802NR2G-ND		ON SemiconductorMOSFET N-CH 30V 11.1A 8-SOIC
RoHS: Compliant
Container: Tape & Reel (TR)		Temporarily Out of Stock
    NTMS4802NR2G
    DISTI # NTMS4802NR2G    		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R (Alt: NTMS4802NR2G)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
      NTMS4802NR2G
      DISTI # 863-NTMS4802NR2G      		ON SemiconductorMOSFET 30V 13.6A N-CH 0.009OHM
      RoHS: Compliant      		0
        NTMS4802NR2GON Semiconductor 
        RoHS: Not Compliant        		5720
        • 1000:$0.4900
        • 500:$0.5100
        • 100:$0.5300
        • 25:$0.5600
        • 1:$0.6000
        NTMS4802NR2GON SemiconductorINSTOCK573
          NTMS4802NR2GON SemiconductorPower MOSFET500
          • 1:$0.4800
          • 100:$0.4800
          • 500:$0.4800
          • 1000:$0.4800
          Bild Teil # Beschreibung
          NTMS4816NR2G

          Mfr.#: NTMS4816NR2G

          OMO.#: OMO-NTMS4816NR2G

          		 MOSFET NFET SO8 30V 11A NCH 0.030R
          NTMS4807NR2G

          Mfr.#: NTMS4807NR2G

          OMO.#: OMO-NTMS4807NR2G

          		 MOSFET NFET SO8 30V 14.8A 0.061R
          NTMS4801NR2G

          Mfr.#: NTMS4801NR2G

          OMO.#: OMO-NTMS4801NR2G

          		 MOSFET NFET SO8 30V 9.9A 12.5mOhm
          NTMS4801NR2G

          Mfr.#: NTMS4801NR2G

          OMO.#: OMO-NTMS4801NR2G-ON-SEMICONDUCTOR

          		 MOSFET N-CH 30V 7.5A 8-SOIC
          NTMS4807NR2G

          Mfr.#: NTMS4807NR2G

          OMO.#: OMO-NTMS4807NR2G-ON-SEMICONDUCTOR

          		 MOSFET N-CH 30V 9.1A 8-SOIC
          NTMS4816NR2G

          Mfr.#: NTMS4816NR2G

          OMO.#: OMO-NTMS4816NR2G-ON-SEMICONDUCTOR

          		 MOSFET N-CH 30V 6.8A 8-SOIC
          NTMS4840NR2G

          Mfr.#: NTMS4840NR2G

          OMO.#: OMO-NTMS4840NR2G-ON-SEMICONDUCTOR

          		 MOSFET N-CH 30V 4.5A 8SOIC
          NTMS4872NR2G , FM4002-M

          Mfr.#: NTMS4872NR2G , FM4002-M

          OMO.#: OMO-NTMS4872NR2G-FM4002-M-1190

          		 Neu und Original
          NTMS4873NF

          Mfr.#: NTMS4873NF

          OMO.#: OMO-NTMS4873NF-1190

          		 Neu und Original
          NTMS4873NFR2G

          Mfr.#: NTMS4873NFR2G

          OMO.#: OMO-NTMS4873NFR2G-ON-SEMICONDUCTOR

          		 MOSFET N-CH 30V 7.1A 8-SOIC
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1000
          Menge eingeben:
          Der aktuelle Preis von NTMS4802NR2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          0,72 $
          0,72 $
          10
          0,68 $
          6,84 $
          100
          0,65 $
          64,80 $
          500
          0,61 $
          306,00 $
          1000
          0,58 $
          576,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
          Beginnen mit
          Top