NTMS480

NTMS4801NR2G vs NTMS4800N vs NTMS4807N

 
PartNumberNTMS4801NR2GNTMS4800NNTMS4807N
DescriptionMOSFET NFET SO8 30V 9.9A 12.5mOhm
ManufacturerON SemiconductorONON
Product CategoryMOSFETIC ChipsFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length5 mm--
SeriesNTMS4801N--
Transistor Type1 N-Channel--
Width4 mm--
BrandON Semiconductor--
Fall Time9.8 ns--
Product TypeMOSFET--
Rise Time3.7 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time10.5 ns--
Unit Weight0.006596 oz--
Hersteller Teil # Beschreibung RFQ
NTMS4807NR2G MOSFET NFET SO8 30V 14.8A 0.061R
NTMS4801NR2G MOSFET NFET SO8 30V 9.9A 12.5mOhm
NTMS4800N Neu und Original
NTMS4807N Neu und Original
NTMS4807NR2G 4807N Neu und Original
ON Semiconductor
ON Semiconductor
NTMS4800NR2G MOSFET 30V 8A 0.020OHM N-CH
NTMS4800NR2G MOSFET N-CH 30V 4.9A 8-SOIC
NTMS4801NR2G MOSFET N-CH 30V 7.5A 8-SOIC
NTMS4807NR2G MOSFET N-CH 30V 9.1A 8-SOIC
NTMS4802NR2G IGBT Transistors MOSFET 30V 13.6A N-CH 0.009OHM
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