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NTMS4800NR2G

NTMS4800NR2G
Mfr. #:
NTMS4800NR2G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET 30V 8A 0.020OHM N-CH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NTMS4800NR2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMS4800NR2G DatasheetNTMS4800NR2G Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOIC-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
20 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.5 mm
Länge:
5 mm
Transistortyp:
1 N-Channel
Breite:
4 mm
Marke:
ON Semiconductor
Abfallzeit:
6.5 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
21 ns
Typische Einschaltverzögerungszeit:
9.4 ns
Gewichtseinheit:
0.006596 oz
Tags
NTMS480, NTMS48, NTMS4, NTMS, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
***emi
Power MOSFET, 30 V, 8.0 A, N-Channel
***th Star Micro
Power MOSFET 30V 8A N Channel SOIC8
***ark
N Channel Mosfet, 30V, 6.4A, Soic, Full Reel
***r Electronics
Small Signal Field-Effect Transistor, 6.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***nsix Microsemi
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.7A; On Resistance Rds(On):0.0125Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
***nell
MOSFET,DUAL N-CH 30V 9.7A SO8; Transistor Type:Power MOSFET; Transistor Polarity:N ; Voltage, Vds Typ:30V; Current, Id Cont:9.7A; On State Resistance:15.5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +175°C; No. of Pins:8; Power Dissipation Pd:2W; Voltage, Vgs th Max:2.35V; Transistor Case Style:SOIC
***ure Electronics
N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
*** Stop Electro
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***et Europe
Trans MOSFET N/P-CH 30V 8.5A/7A 8-Pin SOIC T/R
***ure Electronics
DMC3021LSD Series 30 V 21 mOhm Complementary Pair Enhancement Mode Mosfet
***ark
DUAL MOSFET, COMPLEMENT, 30V, 8.5A, SOIC ROHS COMPLIANT: YES
*** Stop Electro
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 30V 10A Automotive 8-Pin SOP T/R
***ark
Mosfet, N-Ch, 30V, 10A, Soic Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Teil # Mfg. Beschreibung Aktie Preis
NTMS4800NR2G
DISTI # NTMS4800NR2G-ND		ON SemiconductorMOSFET N-CH 30V 4.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NTMS4800NR2GON Semiconductor 
    RoHS: Not Compliant    		71716
    • 1000:$0.1800
    • 100:$0.1900
    • 500:$0.1900
    • 25:$0.2000
    • 1:$0.2200
    NTMS4800NR2G
    DISTI # 863-NTMS4800NR2G    		ON SemiconductorMOSFET 30V 8A 0.020OHM N-CH
    RoHS: Compliant    		0
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von NTMS4800NR2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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