IRFZ24NSTRRPBF

Mfr. #:: IRFZ24NSTRRPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET 55V 1 N-CH HEXFET 70mOhms 13.3nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRFZ24NSTRRPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 55 V

Id - Kontinuierlicher Drainstrom:: 17 A

Rds On - Drain-Source-Widerstand:: 70 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 13.3 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 45 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 2.3 mm

Länge:: 6.5 mm

Transistortyp:: 1 N-Channel

Typ:: HEXFET Leistungs-MOSFET

Breite:: 6.22 mm

Marke:: Infineon / IR

Abfallzeit:: 27 ns

Produktart:: MOSFET

Anstiegszeit:: 34 ns

Werkspackungsmenge:: 800

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 19 ns

Typische Einschaltverzögerungszeit:: 4.9 ns

Gewichtseinheit:: 0.139332 oz

Tags: IRFZ24NST, IRFZ24NS, IRFZ24N, IRFZ24, IRFZ2, IRFZ, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFZ24NSTRRPBF Beschreibung

***et: Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) D2PAK T/R

***ernational Rectifier: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

***(Formerly Allied Electronics): MOSFET, 55V, 17A, 70 MOHM, 13.3 NC QG, D2-PAK

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):70mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;D2Pak;PD 45W;VGS +/-20V;Qg 20

***et: Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) D2PAK

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):70mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 55V, 17A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:45W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:71mJ; Capacitance Ciss Typ:370pF; Current Iar:10A; Current Id Max:17A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:27ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:3.3°C/W; N-channel Gate Charge:20nC; No. of Transistors:1; On State resistance @ Vgs = 10V:70mohm; Package / Case:D2-PAK; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:68A; Reverse Recovery Time trr Typ:56ns

***(Formerly Allied Electronics): IRLZ24NSPBF N-channel MOSFET Transistor; 18 A; 55 V; 3-Pin D2PAK

***ure Electronics: Single N-Channel 55 V 0.06 Ohm 15 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

*** Electronics: MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.06Ohm; ID 18A; D2Pak; PD 45W; VGS +/-16V; Qg 15

***ical: Trans MOSFET N-CH 55V 18A 3-Pin(2+Tab) D2PAK Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.06Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. Of Pins:3Pinsrohs Compliant: Yes

***ment14 APAC: N CHANNEL MOSFET, 55V, 18A, D2-PAK; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.8W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:68mJ; Capacitance Ciss Typ:480pF; Current Id Max:18A; Package / Case:D2-PAK; Power Dissipation Pd:3.8W; Power Dissipation Pd:3.8W; Pulse Current Idm:72A; Reverse Recovery Time trr Typ:60ns; SMD Marking:Z24NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

***ineon SCT: -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - D2PAK

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -55V, -12A, 175 MOHM, 12.7 NC QG, D2-PAK

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***nell: MOSFET, P, 55V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-55V; Current, Id Cont:12A; Resistance, Rds On:0.175ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-262AB; Current, Idm Pulse:48A; Power, Pd:45W; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V

***icroelectronics: N-channel 60 V, 0.07 Ohm typ., 16 A STripFET II Power MOSFET in D2PAK package

***ure Electronics: N-Channel 60 V 0.09 Ohm Surface Mount STripFET Power MosFet - D2PAK

***ical: Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 60V, 0R07, 16A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

***ser: MOSFETs- Power and Small Signal 60V 15A N-Channel No-Cancel/No-Return

***i-Key: MOSFET N-CH 60V 15A D2PAK

***r Electronics: Power Field-Effect Transistor, 15A I(D), 60V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRFZ24NSTRRPBF DISTI # IRFZ24NSTRRPBF-ND	Infineon Technologies AG	MOSFET N-CH 55V 17A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Limited Supply - Call
IRFZ24NSTRRPBF DISTI # 70019772	Infineon Technologies AG	MOSFET,55V,17A,70 MOHM,13.3 NC QG,D2-PAK RoHS: Compliant	0	800:$1.9100 1600:$1.8720 4000:$1.8150 8000:$1.7380 20000:$1.6240
IRFZ24NSTRRPBF DISTI # 942-IRFZ24NSTRRPBF	Infineon Technologies AG	MOSFET 55V 1 N-CH HEXFET 70mOhms 13.3nC RoHS: Compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IRFZ24NSTRLPBF OMO.#: OMO-IRFZ24NSTRLPBF	MOSFET MOSFT 55V 17A 70mOhm 13.3nC
	Mfr.#: IRFZ24NSTRRPBF OMO.#: OMO-IRFZ24NSTRRPBF	MOSFET 55V 1 N-CH HEXFET 70mOhms 13.3nC
	Mfr.#: IRFZ24NL OMO.#: OMO-IRFZ24NL-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 17A TO-262
	Mfr.#: IRFZ24NLPBF OMO.#: OMO-IRFZ24NLPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 17A TO-262
	Mfr.#: IRFZ24NSTRL OMO.#: OMO-IRFZ24NSTRL-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 17A D2PAK
	Mfr.#: IRFZ24NSTRR OMO.#: OMO-IRFZ24NSTRR-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 17A D2PAK
	Mfr.#: IRFZ24NSTRLPBF OMO.#: OMO-IRFZ24NSTRLPBF-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET MOSFT 55V 17A 70mOhm 13.3nC
	Mfr.#: IRFZ24NPBF,IRFZ24NSTRPBF OMO.#: OMO-IRFZ24NPBF-IRFZ24NSTRPBF-1190	Neu und Original
	Mfr.#: IRFZ24NPBF. OMO.#: OMO-IRFZ24NPBF--1190	Transistor Polarity:N Channel, Continuous Drain Current Id:17A, Drain Source Voltage Vds:55V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipa
	Mfr.#: IRFZ24NSPBF,FZ24NS,IRFZ2 OMO.#: OMO-IRFZ24NSPBF-FZ24NS-IRFZ2-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5500
Menge eingeben:

Der aktuelle Preis von IRFZ24NSTRRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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IRFZ24NSTRRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes