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IRFZ24NSTRLPBF

IRFZ24NSTRLPBF
Mfr. #:
IRFZ24NSTRLPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 55V 17A 70mOhm 13.3nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFZ24NSTRLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
17 A
Rds On - Drain-Source-Widerstand:
70 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
20 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
3.8 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
4.5 S
Abfallzeit:
27 ns
Produktart:
MOSFET
Anstiegszeit:
34 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 ns
Typische Einschaltverzögerungszeit:
4.9 ns
Teil # Aliase:
SP001565138
Gewichtseinheit:
0.139332 oz
Tags
IRFZ24NST, IRFZ24NS, IRFZ24N, IRFZ24, IRFZ2, IRFZ, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFZ24NSTRLPBF N-channel MOSFET Module,17 A, 55 V, 3-Pin D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):70mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRLZ24NSPBF N-channel MOSFET Transistor; 18 A; 55 V; 3-Pin D2PAK
***ure Electronics
Single N-Channel 55 V 0.06 Ohm 15 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 55V 18A 3-Pin(2+Tab) D2PAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.06Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. Of Pins:3Pinsrohs Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 55V, 18A, D2-PAK; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.8W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:68mJ; Capacitance Ciss Typ:480pF; Current Id Max:18A; Package / Case:D2-PAK; Power Dissipation Pd:3.8W; Power Dissipation Pd:3.8W; Pulse Current Idm:72A; Reverse Recovery Time trr Typ:60ns; SMD Marking:Z24NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***ineon SCT
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - D2PAK
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -55V, -12A, 175 MOHM, 12.7 NC QG, D2-PAK
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***nell
MOSFET, P, 55V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-55V; Current, Id Cont:12A; Resistance, Rds On:0.175ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-262AB; Current, Idm Pulse:48A; Power, Pd:45W; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
***icroelectronics
N-channel 60 V, 0.07 Ohm typ., 16 A STripFET II Power MOSFET in D2PAK package
***ure Electronics
N-Channel 60 V 0.09 Ohm Surface Mount STripFET Power MosFet - D2PAK
***ical
Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 60V, 0R07, 16A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
***ser
MOSFETs- Power and Small Signal 60V 15A N-Channel No-Cancel/No-Return
***i-Key
MOSFET N-CH 60V 15A D2PAK
***r Electronics
Power Field-Effect Transistor, 15A I(D), 60V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET N-CH 60V 15A D2PAK
***ser
MOSFETs- Power and Small Signal 60V 15A N-Channel
***ponent Stockers USA
15 A 60 V 0.09 ohm N-CHANNEL Si POWER MOSFET
***r Electronics
Power Field-Effect Transistor, 15A I(D), 60V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
RES SMD 14.3K OHM 1% 1/4W 1206
Teil # Mfg. Beschreibung Aktie Preis
IRFZ24NSTRLPBF
DISTI # IRFZ24NSTRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 55V 17A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    IRFZ24NSTRLPBF
    DISTI # IRFZ24NSTRLPBFCT-ND    		Infineon Technologies AGMOSFET N-CH 55V 17A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRFZ24NSTRLPBF
      DISTI # IRFZ24NSTRLPBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 55V 17A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRFZ24NSTRLPBF
        DISTI # 70019034        		Infineon Technologies AGIRFZ24NSTRLPBF N-channel MOSFET Module,17 A,55 V,3-Pin D2PAK
        RoHS: Compliant        		0
        • 800:$0.7200
        IRFZ24NSTRLPBF
        DISTI # 942-IRFZ24NSTRLPBF        		Infineon Technologies AGMOSFET MOSFT 55V 17A 70mOhm 13.3nC
        RoHS: Compliant        		0
          IRFZ24NSTRLPBFInternational Rectifier 
          RoHS: Compliant          		Europe - 8610
            Bild Teil # Beschreibung
            IRFZ24NPBF

            Mfr.#: IRFZ24NPBF

            OMO.#: OMO-IRFZ24NPBF

            		 MOSFET MOSFT 55V 17A 70mOhm 13.3nC
            IRFZ24NSTRRPBF

            Mfr.#: IRFZ24NSTRRPBF

            OMO.#: OMO-IRFZ24NSTRRPBF

            		 MOSFET 55V 1 N-CH HEXFET 70mOhms 13.3nC
            IRFZ24NL

            Mfr.#: IRFZ24NL

            OMO.#: OMO-IRFZ24NL-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 55V 17A TO-262
            IRFZ24NSTRL

            Mfr.#: IRFZ24NSTRL

            OMO.#: OMO-IRFZ24NSTRL-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 55V 17A D2PAK
            IRFZ24NSPBF

            Mfr.#: IRFZ24NSPBF

            OMO.#: OMO-IRFZ24NSPBF-1190

            		 MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.07Ohm, ID 17A, D2Pak, PD 45W, VGS +/-20V, Qg 20
            IRFZ24NPBF,IRFZ24N

            Mfr.#: IRFZ24NPBF,IRFZ24N

            OMO.#: OMO-IRFZ24NPBF-IRFZ24N-1190

            		 Neu und Original
            IRFZ24NPBF-CN

            Mfr.#: IRFZ24NPBF-CN

            OMO.#: OMO-IRFZ24NPBF-CN-1190

            		 Neu und Original
            IRFZ24NPBF.

            Mfr.#: IRFZ24NPBF.

            OMO.#: OMO-IRFZ24NPBF--1190

            		 Transistor Polarity:N Channel, Continuous Drain Current Id:17A, Drain Source Voltage Vds:55V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipa
            IRFZ24NS

            Mfr.#: IRFZ24NS

            OMO.#: OMO-IRFZ24NS-1190

            		 MOSFET N-CH 55V 17A HEXFET AUTO D2PAK, RL
            IRFZ24NSPBF,FZ24NS,IRFZ2

            Mfr.#: IRFZ24NSPBF,FZ24NS,IRFZ2

            OMO.#: OMO-IRFZ24NSPBF-FZ24NS-IRFZ2-1190

            		 Neu und Original
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            3500
            Menge eingeben:
            Der aktuelle Preis von IRFZ24NSTRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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