IPP114N12N3 G

IPP114N12N3 G
Mfr. #:
IPP114N12N3 G
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP114N12N3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS 3
Verpackung
Rohr
Teil-Aliasnamen
IPP114N12N3GXK IPP114N12N3GXKSA1 SP000652740
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Handelsname
OptiMOS
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
136 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
7 ns
Anstiegszeit
36 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
75 A
Vds-Drain-Source-Breakdown-Voltage
120 V
Rds-On-Drain-Source-Widerstand
11.4 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
30 nS
Qg-Gate-Ladung
49 nC
Tags
IPP114N12N3G, IPP114N12N3, IPP114N1, IPP114, IPP11, IPP1, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IPP114N12N3GXKSA1
DISTI # IPP114N12N3GXKSA1-ND
Infineon Technologies AGMOSFET N-CH 120V 75A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
328In Stock
  • 1000:$1.1425
  • 500:$1.3789
  • 100:$1.7728
  • 10:$2.2060
  • 1:$2.4400
IPP114N12N3GXKSA1
DISTI # IPP114N12N3GXKSA1
Infineon Technologies AGTrans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP114N12N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.0319
  • 1000:$0.9939
  • 2000:$0.9579
  • 3000:$0.9259
  • 5000:$0.9099
IPP114N12N3GXKSA1
DISTI # SP000652740
Infineon Technologies AGTrans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 (Alt: SP000652740)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.2979
  • 10:€1.0089
  • 25:€0.9359
  • 50:€0.9069
  • 100:€0.8919
  • 500:€0.8839
  • 1000:€0.8719
IPP114N12N3GXKSA1
DISTI # 12AC9727
Infineon Technologies AGMOSFET, N-CH, 120V, 75A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes371
  • 1:$3.0300
  • 10:$2.7600
  • 100:$2.2400
  • 500:$1.7800
  • 1000:$1.5000
IPP114N12N3 G
DISTI # 726-IPP114N12N3G
Infineon Technologies AGMOSFET N-Ch 120V 75A TO220-3 OptiMOS 3
RoHS: Compliant
121
  • 1:$2.1100
  • 10:$1.8000
  • 100:$1.4400
  • 500:$1.2600
IPP114N12N3GInfineon Technologies AGPower Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
363
  • 1000:$0.8700
  • 500:$0.9100
  • 100:$0.9500
  • 25:$0.9900
  • 1:$1.0700
IPP114N12N3GXKSA1
DISTI # 8922179P
Infineon Technologies AGMOSFET N-CHANNEL 100V 75A OPTIMOS TO220, TU405
  • 25:£1.3760
  • 100:£1.2040
  • 250:£1.1260
  • 500:£1.0640
IPP114N12N3GXKSA1
DISTI # IPP114N12N3GXKSA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,120V,300A,136W,PG-TO220-3112
  • 1:$1.6700
  • 3:$1.4500
  • 10:$1.1600
  • 100:$1.0000
IPP114N12N3GXKSA1
DISTI # 2709956
Infineon Technologies AGMOSFET, N-CH, 120V, 75A, TO-220
RoHS: Compliant
371
  • 1:$3.8700
  • 10:$3.5000
  • 100:$2.8100
  • 500:$2.1900
  • 1000:$1.8100
IPP114N12N3GXKSA1
DISTI # 2709956
Infineon Technologies AGMOSFET, N-CH, 120V, 75A, TO-220
RoHS: Compliant
371
  • 1:£1.5600
  • 10:£1.2200
  • 100:£1.2000
  • 250:£1.1300
  • 500:£1.0400
Bild Teil # Beschreibung
IPP114N03L G

Mfr.#: IPP114N03L G

OMO.#: OMO-IPP114N03L-G

MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3
IPP114N12N3GXKSA1

Mfr.#: IPP114N12N3GXKSA1

OMO.#: OMO-IPP114N12N3GXKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 120V 75A TO220-3
IPP114N03L G

Mfr.#: IPP114N03L G

OMO.#: OMO-IPP114N03L-G-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 30A TO-220-3
IPP114N03LG

Mfr.#: IPP114N03LG

OMO.#: OMO-IPP114N03LG-1190

Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP114N12N

Mfr.#: IPP114N12N

OMO.#: OMO-IPP114N12N-1190

Neu und Original
IPP114N12N3

Mfr.#: IPP114N12N3

OMO.#: OMO-IPP114N12N3-1190

Neu und Original
IPP114N12N3 G(SP00065274

Mfr.#: IPP114N12N3 G(SP00065274

OMO.#: OMO-IPP114N12N3-G-SP00065274-1190

Neu und Original
IPP114N12N3G

Mfr.#: IPP114N12N3G

OMO.#: OMO-IPP114N12N3G-1190

Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP114N12N3G,114N12N

Mfr.#: IPP114N12N3G,114N12N

OMO.#: OMO-IPP114N12N3G-114N12N-1190

Neu und Original
IPP114N12N3 G

Mfr.#: IPP114N12N3 G

OMO.#: OMO-IPP114N12N3-G-124

Darlington Transistors MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IPP114N12N3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,37 $
1,37 $
10
1,30 $
13,02 $
100
1,23 $
123,38 $
500
1,17 $
582,60 $
1000
1,10 $
1 096,70 $
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