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IPP114N03L G

IPP114N03L G
Mfr. #:
IPP114N03L G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP114N03L G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
11.4 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
38 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Abfallzeit:
2.4 ns
Produktart:
MOSFET
Anstiegszeit:
3 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
3.8 ns
Teil # Aliase:
IPP114N03LGHKSA1 SP000264168
Gewichtseinheit:
0.211644 oz
Tags
IPP114N0, IPP114, IPP11, IPP1, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-220
***el Electronic
Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
***nell
MOSFET, N CH, 30A, 30V, PG-TO220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***emi
N-Channel PowerTrench® MOSFET 30V, 12A, 11.5mΩ
*** Source Electronics
MOSFET N-CH 30V 20A POWER33 / Trans MOSFET N-CH Si 30V 12A 8-Pin WDFN EP T/R
***nell
MOSFET, N CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***et
Trans MOSFET N-CH 25V 50A 3-Pin(3+Tab) TO-220AB
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***emi
Power MOSFET 25V 75A 8 mOhm Single N-Channel D2PAK
***ponent Stockers USA
75 A 25 V 0.013 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 75A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
Single N-Channel 30 V 4.2 mOhm 38 nC OptiMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 30V, 70A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 79W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.2 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ser
MOSFETs- Power and Small Signal 25V 75A N-Channel No-Cancel/No-Return
***i-Key
MOSFET N-CH 25V 9.7A TO220AB
***r Electronics
Power Field-Effect Transistor, 75A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
*** Electronics
N-CHANNEL POWER MOSFET
***et Europe
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220
***el Electronic
Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.4mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
IPP114N03L G
DISTI # IPP114N03LGIN-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO-220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IPP114N03L G
    DISTI # IPP114N03LG    		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-220 - Bulk (Alt: IPP114N03LG)
    RoHS: Not Compliant
    Min Qty: 834
    Container: Bulk    		Americas - 0
    • 834:$0.5329
    • 836:$0.5129
    • 1670:$0.4949
    • 4170:$0.4779
    • 8340:$0.4699
    IPP114N03LGHKSA1
    DISTI # IPP114N03LGHKSA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin TO-220 Tube - Bulk (Alt: IPP114N03LGHKSA1)
    Min Qty: 1137
    Container: Bulk    		Americas - 0
    • 1137:$0.3169
    • 1139:$0.3049
    • 2276:$0.2939
    • 5685:$0.2839
    • 11370:$0.2789
    IPP114N03L G
    DISTI # 726-IPP114N03LG    		Infineon Technologies AGMOSFET N-Ch 30V 30A TO220-3 OptiMOS 3
    RoHS: Compliant    		0
      IPP114N03LGInfineon Technologies AGPower Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		13946
      • 1000:$0.4000
      • 500:$0.4200
      • 100:$0.4300
      • 25:$0.4500
      • 1:$0.4900
      IPP114N03LGHKSA1Infineon Technologies AGPower Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Not Compliant      		7642
      • 1000:$0.2900
      • 500:$0.3100
      • 100:$0.3200
      • 25:$0.3300
      • 1:$0.3600
      Bild Teil # Beschreibung
      IPP114N12N3 G

      Mfr.#: IPP114N12N3 G

      OMO.#: OMO-IPP114N12N3-G

      		 MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3
      IPP114N03L G

      Mfr.#: IPP114N03L G

      OMO.#: OMO-IPP114N03L-G

      		 MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3
      IPP114N03LG

      Mfr.#: IPP114N03LG

      OMO.#: OMO-IPP114N03LG-1190

      		 Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      IPP114N12N

      Mfr.#: IPP114N12N

      OMO.#: OMO-IPP114N12N-1190

      		 Neu und Original
      IPP114N12N3

      Mfr.#: IPP114N12N3

      OMO.#: OMO-IPP114N12N3-1190

      		 Neu und Original
      IPP114N12N3 G(SP00065274

      Mfr.#: IPP114N12N3 G(SP00065274

      OMO.#: OMO-IPP114N12N3-G-SP00065274-1190

      		 Neu und Original
      IPP114N12N3-114N12N

      Mfr.#: IPP114N12N3-114N12N

      OMO.#: OMO-IPP114N12N3-114N12N-1190

      		 Neu und Original
      IPP114N12N3G

      Mfr.#: IPP114N12N3G

      OMO.#: OMO-IPP114N12N3G-1190

      		 Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      IPP114N12N3G,114N12N

      Mfr.#: IPP114N12N3G,114N12N

      OMO.#: OMO-IPP114N12N3G-114N12N-1190

      		 Neu und Original
      IPP114N12N3 G

      Mfr.#: IPP114N12N3 G

      OMO.#: OMO-IPP114N12N3-G-124

      		 Darlington Transistors MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IPP114N03L G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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