BSC014NE2LSIXT

BSC014NE2LSIXT
Mfr. #:
BSC014NE2LSIXT
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC014NE2LSIXT Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC014NE2LSIXT Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS
Verpackung
Spule
Teil-Aliasnamen
BSC014NE2LSIATMA1 SP000911336
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
TDSON-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single Quad Drain Triple Source
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
74 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
3.6 ns
Anstiegszeit
5 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
100 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Source-Threshold-Voltage
1.2 V to 2 V
Rds-On-Drain-Source-Widerstand
1.4 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
25 ns
Typische-Einschaltverzögerungszeit
5 ns
Qg-Gate-Ladung
39 nC
Vorwärts-Transkonduktanz-Min
140 S
Tags
BSC014NE, BSC014, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSC014NE2LSIATMA1
DISTI # BSC014NE2LSIATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 25V 33A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
10In Stock
  • 1000:$0.7818
  • 500:$0.9687
  • 100:$1.2258
  • 10:$1.5300
  • 1:$1.7200
BSC014NE2LSIATMA1
DISTI # BSC014NE2LSIATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 25V 33A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
10In Stock
  • 1000:$0.7818
  • 500:$0.9687
  • 100:$1.2258
  • 10:$1.5300
  • 1:$1.7200
BSC014NE2LSIATMA1
DISTI # BSC014NE2LSIATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 25V 33A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.6819
BSC014NE2LSI
DISTI # BSC014NE2LSIATMA1
Infineon Technologies AGTrans MOSFET N-CH 25V 33A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC014NE2LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.4749
  • 10000:$0.4579
  • 20000:$0.4409
  • 30000:$0.4259
  • 50000:$0.4189
BSC014NE2LSIATMA1
DISTI # 50Y1794
Infineon Technologies AGMOSFET, N-CH, 25V, 100A, 150DEG C, 74W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1:$1.3600
  • 10:$1.1600
  • 25:$1.0700
  • 50:$0.9780
  • 100:$0.8870
  • 250:$0.8360
  • 500:$0.7840
  • 1000:$0.6190
BSC014NE2LSIATMA1Infineon Technologies AGPower Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
50
  • 1000:$0.5300
  • 500:$0.5500
  • 100:$0.5800
  • 25:$0.6000
  • 1:$0.6500
BSC014NE2LSI
DISTI # 726-BSC014NE2LSIXT
Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
RoHS: Compliant
4578
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8870
  • 500:$0.7840
  • 1000:$0.6190
  • 5000:$0.5490
BSC014NE2LSIXT
DISTI # 726-BSC014NE2LSIATMA
Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
RoHS: Compliant
13
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8870
  • 500:$0.7840
  • 1000:$0.6190
  • 5000:$0.5490
BSC014NE2LSIATMA1
DISTI # 726-BSC014NE2LSI
Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
RoHS: Compliant
14
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8870
  • 500:$0.7840
  • 1000:$0.6190
BSC014NE2LSIATMA1
DISTI # 2480708RL
Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON-8
RoHS: Compliant
0
  • 1:$2.1600
  • 10:$1.8400
  • 100:$1.4100
BSC014NE2LSIATMA1
DISTI # 2480708
Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON-8
RoHS: Compliant
3690
  • 1:$2.1600
  • 10:$1.8400
  • 100:$1.4100
BSC014NE2LSIATMA1
DISTI # 2480708
Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON-8
RoHS: Compliant
3691
  • 5:£1.1300
  • 25:£1.0300
  • 100:£0.8050
  • 250:£0.7350
  • 500:£0.6650
Bild Teil # Beschreibung
BSC014N06NSTATMA1

Mfr.#: BSC014N06NSTATMA1

OMO.#: OMO-BSC014N06NSTATMA1

MOSFET DIFFERENTIATED MOSFETS
BSC014N06NS

Mfr.#: BSC014N06NS

OMO.#: OMO-BSC014N06NS

MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
BSC014NE2LSI

Mfr.#: BSC014NE2LSI

OMO.#: OMO-BSC014NE2LSI

MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC014NE2LSIATMA1

Mfr.#: BSC014NE2LSIATMA1

OMO.#: OMO-BSC014NE2LSIATMA1

MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC014N03MSGATMA1

Mfr.#: BSC014N03MSGATMA1

OMO.#: OMO-BSC014N03MSGATMA1

MOSFET LV POWER MOS
BSC014N03LS

Mfr.#: BSC014N03LS

OMO.#: OMO-BSC014N03LS-1190

Neu und Original
BSC014N03LSG

Mfr.#: BSC014N03LSG

OMO.#: OMO-BSC014N03LSG-1190

MOSFET, N-CH, 30V, 100A, TDSON-8
BSC014N03LSGATMA1 , TDA1

Mfr.#: BSC014N03LSGATMA1 , TDA1

OMO.#: OMO-BSC014N03LSGATMA1-TDA1-1190

Neu und Original
BSC014N04LS

Mfr.#: BSC014N04LS

OMO.#: OMO-BSC014N04LS-1190

MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
BSC014NE2LSIATMA1

Mfr.#: BSC014NE2LSIATMA1

OMO.#: OMO-BSC014NE2LSIATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 25V 33A TDSON-8
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von BSC014NE2LSIXT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,82 $
0,82 $
10
0,78 $
7,82 $
100
0,74 $
74,12 $
500
0,70 $
350,00 $
1000
0,66 $
658,80 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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