BSC014NE2LSIATMA1

Mfr. #:: BSC014NE2LSIATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 25V 33A TDSON-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC014NE2LSIATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Infineon-Technologien

Produktkategorie: Transistoren - FETs, MOSFETs - Single

Serie: BSC014NE2

Verpackung: Spule

Teil-Aliasnamen: BSC014NE2LSI BSC014NE2LSIXT SP000911336

Handelsname: OptiMOS

Paket-Koffer: TDSON-8

Technologie: Si

Anzahl der Kanäle: 1 Channel

Transistor-Typ: 1 N-Channel

Transistor-Polarität: N-Kanal

Tags: BSC014NE, BSC014, BSC01, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC014NE2LSIATMA1 Beschreibung

***ure Electronics: Single N-Channel 25 V 2 mOhm 52 nC OptiMOS Power Mosfet - TDSON-8

***ical: Trans MOSFET N-CH 25V 33A Automotive 8-Pin TDSON EP T/R

***ineon: With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC014NE2LSIATMA1 DISTI # BSC014NE2LSIATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 25V 33A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10In Stock	1000:$0.7010 500:$0.8880 100:$1.1451 10:$1.4490 1:$1.6400
BSC014NE2LSIATMA1 DISTI # BSC014NE2LSIATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 33A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10In Stock	1000:$0.7010 500:$0.8880 100:$1.1451 10:$1.4490 1:$1.6400
BSC014NE2LSIATMA1 DISTI # BSC014NE2LSIATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 25V 33A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.6035
BSC014NE2LSI DISTI # BSC014NE2LSIATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 33A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC014NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.4749 10000:$0.4579 20000:$0.4409 30000:$0.4259 50000:$0.4189
BSC014NE2LSIATMA1 DISTI # 50Y1794	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, 150DEG C, 74W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	0	1:$1.3600 10:$1.1600 25:$1.0700 50:$0.9780 100:$0.8870 250:$0.8360 500:$0.7840 1000:$0.6190
BSC014NE2LSI DISTI # 726-BSC014NE2LSIXT	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	243	1:$1.3600 10:$1.1600 100:$0.8870 500:$0.7840 1000:$0.6190 5000:$0.5490
BSC014NE2LSIXT DISTI # 726-BSC014NE2LSIATMA	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	13	1:$1.3600 10:$1.1600 100:$0.8870 500:$0.7840 1000:$0.6190 5000:$0.5490
BSC014NE2LSIATMA1 DISTI # 726-BSC014NE2LSI	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	14	1:$1.3600 10:$1.1600 100:$0.8870 500:$0.7840 1000:$0.6190
BSC014NE2LSIATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	50	1000:$0.5300 500:$0.5500 100:$0.5800 25:$0.6000 1:$0.6500
BSC014NE2LSIATMA1 DISTI # 2480708RL	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant	0	1:$2.1600 10:$1.8400 100:$1.4100
BSC014NE2LSIATMA1 DISTI # 2480708	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant	3685	1:$2.1600 10:$1.8400 100:$1.4100
BSC014NE2LSIATMA1 DISTI # 2480708	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant	8686	5:£1.1300 25:£1.0300 100:£0.8050 250:£0.7350 500:£0.6650

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSC014NE2LSI OMO.#: OMO-BSC014NE2LSI	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC014NE2LSIXT OMO.#: OMO-BSC014NE2LSIXT	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC014NE2LSIATMA1 OMO.#: OMO-BSC014NE2LSIATMA1	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC014NE2LSI OMO.#: OMO-BSC014NE2LSI-1190	Trans MOSFET N-CH 25V 33A 8-Pin TDSON T/R (Alt: BSC014NE2LSI)
	Mfr.#: BSC014NE2LSIATMA1 OMO.#: OMO-BSC014NE2LSIATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 33A TDSON-8
	Mfr.#: BSC014NE2LSIXT OMO.#: OMO-BSC014NE2LSIXT-124	Darlington Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5500
Menge eingeben:

Der aktuelle Preis von BSC014NE2LSIATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,62 $~~; ~~0,62 $~~

10: ~~0,58 $~~; ~~5,84 $~~

100: ~~0,55 $~~; ~~55,35 $~~

500: ~~0,52 $~~; ~~261,40 $~~

1000: ~~0,49 $~~; ~~492,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

BSC014NE 3
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BSC0 601
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BSC014NE2LSIATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes