IPD70N10S3L12ATMA1

Mfr. #:: IPD70N10S3L12ATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 100V 70A TO252-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPD70N10S3L12ATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: IPD70N10S, IPD70N10, IPD70N1, IPD70N, IPD70, IPD7, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD70N10S3L12ATMA1 Beschreibung

***Components: In a Pack of 5, N-Channel MOSFET, 70 A, 100 V, 3-Pin DPAK Infineon IPD70N10S3L12ATMA1

***ical: Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) TO-252

***et Europe: Trans MOSFET N-CH 100V 70A 3-Pin TO-252 T/R

***ark: MOSFET, N CH, 100V, 70A, TO-252-3

***i-Key: MOSFET N-CH 100V 70A TO252-3

***ronik: N-CH 100V 70A 12mOhm TO252-3

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 100V, 70A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:125W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

***nell: MOSFET, CANALE N, 100V, 70A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:70A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0096ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPD70N10S3L12ATMA1 DISTI # IPD70N10S3L12ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 70A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD70N10S3L12ATMA1 DISTI # IPD70N10S3L12ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 70A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD70N10S3L12ATMA1 DISTI # IPD70N10S3L12ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 70A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.7728
IPD70N10S3L12ATMA1 DISTI # IPD70N10S3L12ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD70N10S3L12ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.7489 5000:$0.7219 10000:$0.6959 15000:$0.6729 25000:$0.6609
IPD70N10S3L12ATMA1 DISTI # SP000261250	Infineon Technologies AG	Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) TO-252 (Alt: SP000261250) RoHS: Compliant Min Qty: 2500	Europe - 0	2500:€1.1109 5000:€0.8669 10000:€0.7749 15000:€0.7049 25000:€0.6609
IPD70N10S3L12ATMA1 DISTI # 85X6034	Infineon Technologies AG	MOSFET Transistor, N Channel, 70 A, 100 V, 0.0096 ohm, 10 V, 1.7 V RoHS Compliant: Yes	1495	1000:$0.7550 500:$0.9110 250:$0.9760 100:$1.0400 50:$1.1300 25:$1.2100 10:$1.3000 1:$1.5300
IPD70N10S3L-12 DISTI # 726-IPD70N10S3L12	Infineon Technologies AG	MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T RoHS: Compliant	0	1:$1.5300 10:$1.3000 100:$1.0400 500:$0.9110 1000:$0.7550 2500:$0.7030
IPD70N10S3L12ATMA1 DISTI # N/A	Infineon Technologies AG	MOSFET N-CHANNEL_100+	0
IPD70N10S3L12ATMA1 DISTI # 7533021P	Infineon Technologies AG	MOSFET N-CH 100V 70A OPTIMOS-T TO252, RL	7090	100:£0.7640 50:£0.9220 25:£0.9600 10:£1.0000
IPD70N10S3L12ATMA1 DISTI # 7533021	Infineon Technologies AG	MOSFET N-CH 100V 70A OPTIMOS-T TO252, PK	250	100:£0.7640 50:£0.9220 25:£0.9600 10:£1.0000 5:£1.2480
IPD70N10S3L12ATMA1 DISTI # 2443400	Infineon Technologies AG	MOSFET, N CH, 100V, 70A, TO-252-3 RoHS: Compliant	1495	100:£1.0000 25:£1.2600 5:£1.3900
IPD70N10S3L12ATMA1 DISTI # 2443400	Infineon Technologies AG	MOSFET, N CH, 100V, 70A, TO-252-3 RoHS: Compliant	1495	100:$1.5700 10:$1.9600 1:$2.3100
IPD70N10S3L12ATMA1 DISTI # 2443400RL	Infineon Technologies AG	MOSFET, N CH, 100V, 70A, TO-252-3 RoHS: Compliant	0	100:$1.5700 10:$1.9600 1:$2.3100

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPD70N10S3-12 OMO.#: OMO-IPD70N10S3-12	MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T
	Mfr.#: IPD70N10S3L-12 OMO.#: OMO-IPD70N10S3L-12	MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T
	Mfr.#: IPD70N10S3L12ATMA1 OMO.#: OMO-IPD70N10S3L12ATMA1	MOSFET N-CHANNEL_100+
	Mfr.#: IPD70N10S3L12ATMA1 OMO.#: OMO-IPD70N10S3L12ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 70A TO252-3
	Mfr.#: IPD70N10S3-12 OMO.#: OMO-IPD70N10S3-12-1190	MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T
	Mfr.#: IPD70N10S3-12 QN1012 OMO.#: OMO-IPD70N10S3-12-QN1012-1190	Neu und Original
	Mfr.#: IPD70N10S312 OMO.#: OMO-IPD70N10S312-1190	Neu und Original
	Mfr.#: IPD70N10S312ATMA1 OMO.#: OMO-IPD70N10S312ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 70A TO252-3
	Mfr.#: IPD70N10S3L-12 OMO.#: OMO-IPD70N10S3L-12-126	IGBT Transistors MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von IPD70N10S3L12ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,99 $~~; ~~0,99 $~~

10: ~~0,94 $~~; ~~9,42 $~~

100: ~~0,89 $~~; ~~89,22 $~~

500: ~~0,84 $~~; ~~421,30 $~~

1000: ~~0,79 $~~; ~~793,10 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPD70N10S3L12ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes