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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGTG10N120BND DISTI # C1S541901484134 | ON Semiconductor | Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 140 |
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| HGTG10N120BND DISTI # HGTG10N120BND-ND | ON Semiconductor | IGBT 1200V 35A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 855In Stock |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 1 | Europe - 0 |
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| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 | Asia - 0 | |
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG10N120BND DISTI # 98B1928 | ON Semiconductor | SINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND. DISTI # 16AC0004 | Fairchild Semiconductor Corporation | DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes | 0 | |
| HGTG10N120BND | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | 485 |
|
| HGTG10N120BND | ON Semiconductor | HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant | 75Tube |
|
| HGTG10N120BND DISTI # 512-HGTG10N120BND | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 29 |
|
| HGTG10N120BND_Q DISTI # 512-HGTG10N120BND_Q | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Not compliant | 0 | |
| HGTG10N120BND | Harris Semiconductor | 20 | ||
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,TO247 | 429 |
|
| HGTG10N120BND | Fairchild Semiconductor Corporation | RoHS: Compliant | Europe - 1130 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGTG10N120BND OMO.#: OMO-HGTG10N120BND |
IGBT Transistors 35A 1200V N-Ch |
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Mfr.#: HGTG10N120BND |
IGBT 1200V 35A 298W TO247 |
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Mfr.#: HGTG10N120 OMO.#: OMO-HGTG10N120-1190 |
Neu und Original |
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Mfr.#: HGTG10N120BN OMO.#: OMO-HGTG10N120BN-1190 |
Transistor: IGBT, 1.2kV, 17A, 298W, TO247-3 |
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Mfr.#: HGTG10N120BND 10N120BND |
Neu und Original |
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Mfr.#: HGTG10N120BND,HGTG10N120 |
Neu und Original |
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Mfr.#: HGTG10N120BND,HGTG10N120B, |
Neu und Original |
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Mfr.#: HGTG10N120BND_NL OMO.#: OMO-HGTG10N120BND-NL-1190 |
Neu und Original |
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Mfr.#: HGTG10N120BNS OMO.#: OMO-HGTG10N120BNS-1190 |
Neu und Original |
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Mfr.#: HGTG10N120BND_Q OMO.#: OMO-HGTG10N120BND-Q-1190 |
IGBT Transistors 35A 1200V N-Ch |