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HGTG10N120BND

HGTG10N120BND
Mfr. #:
HGTG10N120BND
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 35A 1200V N-Ch
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTG10N120BND Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
E
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.45 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
17 A
Pd - Verlustleistung:
298 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
HGTG10N120BND
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
35 A
Höhe:
20.82 mm
Länge:
15.87 mm
Breite:
4.82 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
35 A
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Teil # Aliase:
HGTG10N120BND_NL
Gewichtseinheit:
0.225401 oz
Tags
HGTG10N120BND, HGTG10N120B, HGTG10, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Max:298W
***rchild Semiconductor
HGTG10N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Teil # Mfg. Beschreibung Aktie Preis
HGTG10N120BND
DISTI # C1S541901484134		ON SemiconductorTrans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		140
  • 100:$2.5900
  • 50:$2.8200
  • 10:$3.4400
  • 1:$5.3000
HGTG10N120BND
DISTI # HGTG10N120BND-ND		ON SemiconductorIGBT 1200V 35A 298W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		855In Stock
  • 1350:$2.1481
  • 900:$2.5216
  • 450:$2.7946
  • 10:$3.5560
  • 1:$3.9500
HGTG10N120BND
DISTI # HGTG10N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.6900
  • 10:€1.5900
  • 25:€1.5900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.3900
  • 1000:€1.3900
HGTG10N120BND
DISTI # HGTG10N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 450		Asia - 0
    HGTG10N120BND
    DISTI # HGTG10N120BND    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 450:$1.5900
    • 900:$1.5900
    • 1800:$1.5900
    • 2700:$1.4900
    • 4500:$1.4900
    HGTG10N120BND
    DISTI # 98B1928    		ON SemiconductorSINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
    • 1:$3.7700
    • 10:$3.2200
    • 25:$3.0800
    • 50:$2.9500
    • 100:$2.8100
    • 250:$2.6800
    • 500:$2.4200
    HGTG10N120BND.
    DISTI # 16AC0004    		Fairchild Semiconductor CorporationDC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes0
      HGTG10N120BNDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant      		485
      • 1000:$1.8000
      • 500:$1.9000
      • 100:$1.9800
      • 25:$2.0600
      • 1:$2.2200
      HGTG10N120BNDON SemiconductorHGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
      RoHS: Compliant      		75Tube
      • 5:$2.9400
      • 25:$1.9900
      • 50:$1.8300
      • 250:$1.5100
      HGTG10N120BND
      DISTI # 512-HGTG10N120BND      		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
      RoHS: Compliant      		29
      • 1:$3.6300
      • 10:$3.0800
      • 100:$2.6700
      • 250:$2.5400
      • 500:$2.2800
      HGTG10N120BND_Q
      DISTI # 512-HGTG10N120BND_Q      		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
      RoHS: Not compliant      		0
        HGTG10N120BNDHarris Semiconductor 20
          HGTG10N120BND
          DISTI # HGTG10N120BND          		ON SemiconductorTransistor: IGBT,1.2kV,17A,298W,TO247429
          • 1:$3.6000
          • 3:$3.1900
          • 10:$2.7200
          • 30:$2.3500
          • 150:$2.1300
          HGTG10N120BNDFairchild Semiconductor Corporation 
          RoHS: Compliant          		Europe - 1130
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            Verfügbarkeit
            Aktie:
            641
            Auf Bestellung:
            2624
            Menge eingeben:
            Der aktuelle Preis von HGTG10N120BND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            3,62 $
            3,62 $
            10
            3,07 $
            30,70 $
            100
            2,66 $
            266,00 $
            250
            2,53 $
            632,50 $
            500
            2,27 $
            1 135,00 $
            1000
            1,91 $
            1 910,00 $
            2500
            1,82 $
            4 550,00 $
            5000
            1,75 $
            8 750,00 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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