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FJN3314RBU

FJN3314RBU
Mfr. #:
FJN3314RBU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 47K
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJN3314RBU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJN3314RBU Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
4.7 kOhms
Typisches Widerstandsverhältnis:
0.1
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
DC-Kollektor/Basisverstärkung hfe Min:
68
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
300 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Schüttgut
DC-Stromverstärkung hFE Max:
68
Emitter- Basisspannung VEBO:
10 V
Höhe:
5.33 mm
Länge:
5.2 mm
Typ:
Epitaxialer NPN-Siliziumtransistor
Breite:
4.19 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
1000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.006286 oz
Tags
FJN331, FJN33, FJN3, FJN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans Digital BJT NPN 50V 100mA 3-Pin TO-92 Bulk
***i-Key
TRANS PREBIAS NPN 300MW TO92-3
Teil # Mfg. Beschreibung Aktie Preis
FJN3314RBU
DISTI # FJN3314RBU-ND		ON SemiconductorTRANS PREBIAS NPN 300MW TO92-3
RoHS: Compliant
Min Qty: 20000
Container: Bulk		Limited Supply - Call
    FJN3314RBU
    DISTI # 512-FJN3314RBU    		ON SemiconductorBipolar Transistors - Pre-Biased 50V/100mA/4.7K 47K
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
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      Mfr.#: FJN3303TA

      OMO.#: OMO-FJN3303TA

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      FJN3304RTA

      Mfr.#: FJN3304RTA

      OMO.#: OMO-FJN3304RTA

      		 Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3306RTA

      Mfr.#: FJN3306RTA

      OMO.#: OMO-FJN3306RTA

      		 Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3307RTA

      Mfr.#: FJN3307RTA

      OMO.#: OMO-FJN3307RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3315RTA

      Mfr.#: FJN3315RTA

      OMO.#: OMO-FJN3315RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3302RAT

      Mfr.#: FJN3302RAT

      OMO.#: OMO-FJN3302RAT-1190

      		 Neu und Original
      FJN3302RBU

      Mfr.#: FJN3302RBU

      OMO.#: OMO-FJN3302RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3308R

      Mfr.#: FJN3308R

      OMO.#: OMO-FJN3308R-1190

      		 Neu und Original
      FJN3309RTA

      Mfr.#: FJN3309RTA

      OMO.#: OMO-FJN3309RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3310RTA

      Mfr.#: FJN3310RTA

      OMO.#: OMO-FJN3310RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von FJN3314RBU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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