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FJN3306RTA

FJN3306RTA
Mfr. #:
FJN3306RTA
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJN3306RTA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
10 kOhms
Typisches Widerstandsverhältnis:
0.21
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3 Kinked Lead
DC-Kollektor/Basisverstärkung hfe Min:
68
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
300 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Munitionspackung
DC-Stromverstärkung hFE Max:
68
Emitter- Basisspannung VEBO:
10 V
Höhe:
5.33 mm
Länge:
5.2 mm
Typ:
Epitaxialer NPN-Siliziumtransistor
Breite:
4.19 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
2000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.010088 oz
Tags
FJN330, FJN33, FJN3, FJN
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
Teil # Mfg. Beschreibung Aktie Preis
FJN3306RTA
DISTI # FJN3306RTA-ND		ON SemiconductorTRANS PREBIAS NPN 300MW TO92-3
RoHS: Compliant
Min Qty: 16000
Container: Tape & Box (TB)		Limited Supply - Call
    FJN3306RTAFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
    RoHS: Compliant    		35000
    • 100:$0.0100
    • 500:$0.0100
    • 1000:$0.0100
    • 1:$0.0200
    • 25:$0.0200
    FJN3306RTA
    DISTI # 512-FJN3306RTA    		ON SemiconductorBipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      FJN3305RTA

      Mfr.#: FJN3305RTA

      OMO.#: OMO-FJN3305RTA

      		 Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3310RTA

      Mfr.#: FJN3310RTA

      OMO.#: OMO-FJN3310RTA

      		 Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3314RBU

      Mfr.#: FJN3314RBU

      OMO.#: OMO-FJN3314RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3301

      Mfr.#: FJN3301

      OMO.#: OMO-FJN3301-1190

      		 Neu und Original
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      Mfr.#: FJN3302

      OMO.#: OMO-FJN3302-1190

      		 Neu und Original
      FJN3302RBU

      Mfr.#: FJN3302RBU

      OMO.#: OMO-FJN3302RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3303BU

      Mfr.#: FJN3303BU

      OMO.#: OMO-FJN3303BU-ON-SEMICONDUCTOR

      		 TRANS NPN 400V 1.5A TO-92
      FJN3304RBU

      Mfr.#: FJN3304RBU

      OMO.#: OMO-FJN3304RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3309RTA

      Mfr.#: FJN3309RTA

      OMO.#: OMO-FJN3309RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3310RBU

      Mfr.#: FJN3310RBU

      OMO.#: OMO-FJN3310RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von FJN3306RTA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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