OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

FJN3310RTA

FJN3310RTA
Mfr. #:
FJN3310RTA
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJN3310RTA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
10 kOhms
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3 Kinked Lead
DC-Kollektor/Basisverstärkung hfe Min:
100
Kollektor- Emitterspannung VCEO Max:
40 V
Kontinuierlicher Kollektorstrom:
0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
300 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Munitionspackung
DC-Stromverstärkung hFE Max:
600
Emitter- Basisspannung VEBO:
5 V
Höhe:
5.33 mm
Länge:
5.2 mm
Typ:
Epitaxialer NPN-Siliziumtransistor
Breite:
4.19 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
2000
Unterkategorie:
Transistoren
Teil # Aliase:
FJN3310RTA_NL
Gewichtseinheit:
0.010088 oz
Tags
FJN331, FJN33, FJN3, FJN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3
***i-Key
TRANSISTOR NPN 40V 100MA TO-92
Teil # Mfg. Beschreibung Aktie Preis
FJN3310RTA
DISTI # FJN3310RTA-ND		ON SemiconductorTRANS PREBIAS NPN 300MW TO92-3
RoHS: Compliant
Min Qty: 16000
Container: Tape & Box (TB)		Limited Supply - Call
    FJN3310RTA
    DISTI # 512-FJN3310RTA    		ON SemiconductorBipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
    RoHS: Compliant    		0
      FJN3310RTAFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
      RoHS: Compliant      		372500
      • 100:$0.0100
      • 500:$0.0100
      • 1000:$0.0100
      • 1:$0.0200
      • 25:$0.0200
      Bild Teil # Beschreibung
      FJN3311RBU

      Mfr.#: FJN3311RBU

      OMO.#: OMO-FJN3311RBU

      		 Bipolar Transistors - Pre-Biased NPN/40V/100mA/22K
      FJN3303RTA

      Mfr.#: FJN3303RTA

      OMO.#: OMO-FJN3303RTA

      		 Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3308RBU

      Mfr.#: FJN3308RBU

      OMO.#: OMO-FJN3308RBU

      		 Bipolar Transistors - Pre-Biased 50V/100mA/47K 22K
      FJN3310RBU

      Mfr.#: FJN3310RBU

      OMO.#: OMO-FJN3310RBU

      		 Bipolar Transistors - Pre-Biased NPN/40V/100mA/10K
      FJN3315RTA

      Mfr.#: FJN3315RTA

      OMO.#: OMO-FJN3315RTA

      		 Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3301RTA

      Mfr.#: FJN3301RTA

      OMO.#: OMO-FJN3301RTA

      		 Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3308RBU

      Mfr.#: FJN3308RBU

      OMO.#: OMO-FJN3308RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3312RTA

      Mfr.#: FJN3312RTA

      OMO.#: OMO-FJN3312RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3309RTA

      Mfr.#: FJN3309RTA

      OMO.#: OMO-FJN3309RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3311RTA

      Mfr.#: FJN3311RTA

      OMO.#: OMO-FJN3311RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5000
      Menge eingeben:
      Der aktuelle Preis von FJN3310RTA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Beginnen mit
      Neueste Produkte
      • Gate Drivers
        Gate Drivers
        The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
      • Compare FJN3310RTA
        Compare FJN3310RTA
        FJN3310RBU vs FJN3310RTA vs FJN3311RBU
      • NCP137 700 mA LDO Regulators
        NCP137 700 mA LDO Regulators
        ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
      • NCP114 Low Dropout Regulators
        NCP114 Low Dropout Regulators
        ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
      • LC717A00AR Touch Sensor
        LC717A00AR Touch Sensor
        These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
      • FDMQ86530L Quad-MOSFET
        FDMQ86530L Quad-MOSFET
        ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
      More Newest Products
      Top