FJN3308RBU

FJN3308RBU
Mfr. #:
FJN3308RBU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - Pre-Biased 50V/100mA/47K 22K
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJN3308RBU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJN3308RBU DatasheetFJN3308RBU Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
47 kOhms
Typisches Widerstandsverhältnis:
2.1
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
DC-Kollektor/Basisverstärkung hfe Min:
56
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
300 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Schüttgut
DC-Stromverstärkung hFE Max:
56
Emitter- Basisspannung VEBO:
10 V
Höhe:
5.33 mm
Länge:
5.2 mm
Typ:
Epitaxialer NPN-Siliziumtransistor
Breite:
4.19 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
1000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.006286 oz
Tags
FJN3308, FJN330, FJN33, FJN3, FJN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans Digital BJT NPN 50V 100mA 3-Pin TO-92 Bulk
***i-Key
TRANS PREBIAS NPN 300MW TO92-3
Teil # Mfg. Beschreibung Aktie Preis
FJN3308RBU
DISTI # FJN3308RBU-ND
ON SemiconductorTRANS PREBIAS NPN 300MW TO92-3
RoHS: Compliant
Min Qty: 20000
Container: Bulk
Limited Supply - Call
    FJN3308RBU
    DISTI # 512-FJN3308RBU
    ON SemiconductorBipolar Transistors - Pre-Biased 50V/100mA/47K 22K
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      FJN3306RBU

      Mfr.#: FJN3306RBU

      OMO.#: OMO-FJN3306RBU

      Bipolar Transistors - Pre-Biased 50V/100mA/10K 47K
      FJN3305RBU

      Mfr.#: FJN3305RBU

      OMO.#: OMO-FJN3305RBU

      Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 10K
      FJN3303BU

      Mfr.#: FJN3303BU

      OMO.#: OMO-FJN3303BU

      Bipolar Transistors - BJT NPN 700V/1.5A
      FJN3303RTA

      Mfr.#: FJN3303RTA

      OMO.#: OMO-FJN3303RTA

      Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3302RTA

      Mfr.#: FJN3302RTA

      OMO.#: OMO-FJN3302RTA

      Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3307RTA

      Mfr.#: FJN3307RTA

      OMO.#: OMO-FJN3307RTA-ON-SEMICONDUCTOR

      TRANS PREBIAS NPN 300MW TO92-3
      FJN3311RBU

      Mfr.#: FJN3311RBU

      OMO.#: OMO-FJN3311RBU-ON-SEMICONDUCTOR

      TRANS PREBIAS NPN 300MW TO92-3
      FJN3312RTA

      Mfr.#: FJN3312RTA

      OMO.#: OMO-FJN3312RTA-ON-SEMICONDUCTOR

      TRANS PREBIAS NPN 300MW TO92-3
      FJN3305/R3305

      Mfr.#: FJN3305/R3305

      OMO.#: OMO-FJN3305-R3305-1190

      Neu und Original
      FJN3311RTA

      Mfr.#: FJN3311RTA

      OMO.#: OMO-FJN3311RTA-ON-SEMICONDUCTOR

      TRANS PREBIAS NPN 300MW TO92-3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von FJN3308RBU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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