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IRFR1018EPBF

IRFR1018EPBF
Mfr. #:
IRFR1018EPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFR1018EPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFR1018EPBF DatasheetIRFR1018EPBF Datasheet (P4-P6)IRFR1018EPBF Datasheet (P7-P9)IRFR1018EPBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
79 A
Rds On - Drain-Source-Widerstand:
7.1 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
46 nC
Pd - Verlustleistung:
110 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001567496
Gewichtseinheit:
0.139332 oz
Tags
IRFR1018, IRFR10, IRFR1, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 56A;D-Pak;PD 110W;VGS +/-20
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-252AA
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:DPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFR1018EPBF
DISTI # 27615553		Infineon Technologies AGTrans MOSFET N-CH Si 60V 79A 3-Pin(2+Tab) DPAK Tube
RoHS: Compliant		2618
  • 3000:$0.6395
  • 1000:$0.7217
  • 500:$0.9138
  • 100:$1.0395
  • 22:$1.3464
IRFR1018EPBF
DISTI # IRFR1018EPBF-ND		Infineon Technologies AGMOSFET N-CH 60V 79A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRFR1018EPBF
    DISTI # SP001567496    		Infineon Technologies AGTrans MOSFET N-CH 60V 79A 3-Pin(2+Tab) DPAK (Alt: SP001567496)
    RoHS: Compliant
    Min Qty: 1    		Europe - 575
    • 1000:€0.4779
    • 500:€0.4869
    • 100:€0.5009
    • 50:€0.5109
    • 25:€0.5859
    • 10:€0.7019
    • 1:€0.8369
    IRFR1018EPBF
    DISTI # IRFR1018EPBF    		Infineon Technologies AGTrans MOSFET N-CH 60V 79A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRFR1018EPBF)
    Min Qty: 511
    Container: Bulk    		Americas - 0
    • 5110:$0.6229
    • 2555:$0.6349
    • 1533:$0.6599
    • 1022:$0.6859
    • 511:$0.7149
    IRFR1018EPBF.
    DISTI # 27AC6813    		Infineon Technologies AGTRENCH_MOSFETS ROHS COMPLIANT: YES0
      IRFR1018EPBF
      DISTI # 70017888      		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 7.1Milliohms,ID 56A,D-Pak,PD 110W,VGS +/-20
      RoHS: Compliant      		0
      • 5:$1.4600
      IRFR1018EPBF
      DISTI # 942-IRFR1018EPBF      		Infineon Technologies AGMOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
      RoHS: Compliant      		3378
      • 1:$1.6000
      • 10:$1.3600
      • 100:$1.0500
      • 500:$0.9230
      • 1000:$0.7290
      IRFR1018EPBFInfineon Technologies AGPower Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		2172
      • 1000:$0.6500
      • 500:$0.6800
      • 100:$0.7100
      • 25:$0.7400
      • 1:$0.7900
      IRFR1018EPBFInternational RectifierPower Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		5785
      • 1000:$0.6500
      • 500:$0.6800
      • 100:$0.7100
      • 25:$0.7400
      • 1:$0.7900
      IRFR1018EPBF
      DISTI # 6887024      		Infineon Technologies AGMOSFET N-CHANNEL 60V 79A HEXFET DPAK, PK395
      • 250:£0.7440
      • 100:£0.7600
      • 50:£0.8760
      • 25:£0.9900
      • 5:£1.2400
      IRFR1018EPBF
      DISTI # 6887024P      		Infineon Technologies AGMOSFET N-CHANNEL 60V 79A HEXFET DPAK, TU275
      • 250:£0.7440
      • 100:£0.7600
      • 50:£0.8760
      • 25:£0.9900
      IRFR1018EPBFInternational Rectifier 256
        IRFR1018EPBF
        DISTI # IRFR1018EPBF        		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,79A,110W,DPAK362
        • 1:$0.9200
        • 3:$0.8200
        • 10:$0.6700
        • 75:$0.5900
        IRFR1018EPBF
        DISTI # 1602229        		Infineon Technologies AGMOSFET, N, D-PAK
        RoHS: Compliant        		0
        • 1000:$1.1300
        • 500:$1.4200
        • 100:$1.6200
        • 10:$2.1000
        • 1:$2.4600
        IRFR1018EPBF
        DISTI # IRFR1018EPBF        		Infineon Technologies AGN-Ch 60V 56A 110W 0,0084R TO252AA
        RoHS: Compliant        		600
        • 75:€0.5590
        • 150:€0.4990
        • 300:€0.4690
        • 600:€0.4515
        IRFR1018ETRPBF
        DISTI # IRFR1018EPBF-GURT        		Infineon Technologies AGN-Ch 60V 56A 110W 0,0084R TO252AA
        RoHS: Compliant        		2650
        • 50:€0.4745
        • 100:€0.4345
        • 500:€0.4145
        • 3000:€0.3990
        Bild Teil # Beschreibung
        LM339AMX/NOPB

        Mfr.#: LM339AMX/NOPB

        OMO.#: OMO-LM339AMX-NOPB

        		 Analog Comparators LOW PWR LOW OFFSET VLTG QUAD COMPARATOR
        SI7852DP-T1-E3

        Mfr.#: SI7852DP-T1-E3

        OMO.#: OMO-SI7852DP-T1-E3

        		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
        VS-30BQ060-M3/9AT

        Mfr.#: VS-30BQ060-M3/9AT

        OMO.#: OMO-VS-30BQ060-M3-9AT

        		 Schottky Diodes & Rectifiers 3A 60V Single Die Schottky Rectifier
        B160-13-F

        Mfr.#: B160-13-F

        OMO.#: OMO-B160-13-F

        		 Schottky Diodes & Rectifiers 60V 1A
        B340LA-13-F

        Mfr.#: B340LA-13-F

        OMO.#: OMO-B340LA-13-F

        		 Schottky Diodes & Rectifiers 40V 3A
        LM25116MH/NOPB

        Mfr.#: LM25116MH/NOPB

        OMO.#: OMO-LM25116MH-NOPB

        		 Switching Controllers WIDE RANGE SYNC BUCK CONTROLLER
        HX1188FNL

        Mfr.#: HX1188FNL

        OMO.#: OMO-HX1188FNL

        		 Audio Transformers / Signal Transformers 100BaseTX SMD NonPoE 350uH 1-Port
        CM3421Y600R-10

        Mfr.#: CM3421Y600R-10

        OMO.#: OMO-CM3421Y600R-10

        		 Common Mode Chokes / Filters 60ohms 0.001ohms 15A
        LM339AMX/NOPB

        Mfr.#: LM339AMX/NOPB

        OMO.#: OMO-LM339AMX-NOPB-TEXAS-INSTRUMENTS

        		 Analog Comparators LOW PWR LOW OFFSET VLTG QUAD COMPARATOR
        SI7852DP-T1-E3

        Mfr.#: SI7852DP-T1-E3

        OMO.#: OMO-SI7852DP-T1-E3-VISHAY

        		 MOSFET N-CH 80V 7.6A PPAK SO-8
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von IRFR1018EPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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