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SI7852DP-T1-E3

SI7852DP-T1-E3
Mfr. #:
SI7852DP-T1-E3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 80V 7.6A PPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7852DP-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI7852DP-E3
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Paket-Koffer
PowerPAKR SO-8
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PowerPAKR SO-8
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
1.9W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
80V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
7.6A (Ta)
Rds-On-Max-Id-Vgs
16.5 mOhm @ 10A, 10V
Vgs-th-Max-Id
2V @ 250μA (Min)
Gate-Lade-Qg-Vgs
41nC @ 10V
Pd-Verlustleistung
1.9 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
11 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
7.6 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Rds-On-Drain-Source-Widerstand
16.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
40 ns
Typische-Einschaltverzögerungszeit
17 ns
Kanal-Modus
Erweiterung
Tags
SI7852DP-T1, SI7852DP-T, SI7852D, SI7852, SI785, SI78, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 16.5 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
***et Europe
Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R
***ied Electronics & Automation
TRANS MOSFET N-CH 80V 7.6A 8-PIN POWERPAK SO T/R
***i-Key
MOSFET N-CH 80V 7.6A PPAK SO-8
***ser
N-Channel MOSFETs 80V 12.5A 5.2W
***
N-CHANNEL 80-V (D-S) MOS
***ponent Electronics
IC SMT ON TAPE
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:12.5A; On Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,80V,7.6A,PPSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):16.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No. of Pins:8; Current Id Max:7.6A; Package / Case:PowerPAK SO-8; Power Dissipation Pd:1.9W; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:80V; Current, Id Cont:7.6A; Resistance, Rds On:10.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:50A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:41nC; No. of Pins:8; Power Dissipation:1.9W; Power, Pd:1.9W; Quantity, Reel:3000; Resistance, Rds on Max:0.0165ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25K; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:1.8°C/W; Voltage, Vds Max:80V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:2V; Width, External:6.2mm; Width, Tape:12mm
Teil # Mfg. Beschreibung Aktie Preis
SI7852DP-T1-E3
DISTI # SI7852DP-T1-E3-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 1000:$1.0616
  • 500:$1.2813
  • 100:$1.6474
  • 10:$2.0500
  • 1:$2.2700
SI7852DP-T1-E3
DISTI # SI7852DP-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7852DP-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 12000
  • 3000:$1.1369
  • 6000:$1.1029
  • 12000:$1.0589
  • 18000:$1.0289
  • 30000:$1.0019
SI7852DP-T1-E3
DISTI # SI7852DP-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R (Alt: SI7852DP-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7852DP-T1-E3
    DISTI # 06J8172    		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 06J8172)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$3.6700
    • 25:$3.0500
    • 50:$2.7100
    • 100:$2.3600
    • 250:$2.2200
    • 500:$2.0800
    • 1000:$1.7200
    SI7852DP-T1-E3
    DISTI # 29X0550    		Vishay IntertechnologiesMOSFET, N CHANNEL, 80V, 7.6A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$1.5700
    • 3000:$1.5600
    • 6000:$1.4900
    • 12000:$1.3200
    SI7852DP-T1-E3
    DISTI # 06J8172    		Vishay IntertechnologiesN CHANNEL MOSFET, 80V, 12.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes0
    • 1:$3.0600
    • 25:$2.5400
    • 50:$2.2600
    • 100:$1.9700
    • 250:$1.8500
    • 500:$1.7300
    • 1000:$1.4300
    SI7852DP-T1-E3
    DISTI # 70026416    		Vishay SiliconixTRANS MOSFET N-CH 80V 7.6A 8-PIN POWERPAK SO T/R
    RoHS: Compliant    		0
    • 3000:$1.4600
    SI7852DP-T1-E3
    DISTI # 781-SI7852DP-E3    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		0
    • 1:$3.0600
    • 10:$2.5400
    • 100:$1.9700
    • 500:$1.7300
    • 1000:$1.4300
    • 3000:$1.3300
    • 6000:$1.2800
    SI7852DP-T1
    DISTI # 781-SI7852DP    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Not compliant    		0
      SI7852DP-T1-E3Vishay IntertechnologiesMOSFET Transistor, N-Channel, LLCC8
      • 2:$2.8500
      • 1:$3.8000
      SI7852DP-T1-E3Vishay IntertechnologiesMOSFET Transistor, N-Channel, LLCC4
      • 3:$1.9600
      • 1:$2.4500
      SI7852DP-T1-E3Vishay IntertechnologiesINSTOCK400
        SI7852DP-T1-E3
        DISTI # 1470137        		Vishay IntertechnologiesMOSFET,N CH,80V,7.6A,PPSO8
        RoHS: Compliant        		0
        • 1:£2.0200
        • 10:£1.6200
        • 100:£1.2900
        • 250:£1.1500
        • 500:£1.0100
        SI7852DP-T1-E3Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8Americas -
          SI7852DP-T1-E3
          DISTI # 1470137          		Vishay IntertechnologiesMOSFET,N CH,80V,7.6A,PPSO8
          RoHS: Compliant          		0
          • 1:$3.7100
          • 10:$3.3500
          • 100:$2.6900
          • 500:$2.0900
          • 1000:$1.7400
          SI7852DP-T1-E3
          DISTI # 1470137RL          		Vishay IntertechnologiesMOSFET,N CH,80V,7.6A,PPSO8
          RoHS: Compliant          		0
          • 1:$3.7100
          • 10:$3.3500
          • 100:$2.6900
          • 500:$2.0900
          • 1000:$1.7400
          Bild Teil # Beschreibung
          SI7852DP-T1-E3

          Mfr.#: SI7852DP-T1-E3

          OMO.#: OMO-SI7852DP-T1-E3

          		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
          SI7852DP-T1-GE3

          Mfr.#: SI7852DP-T1-GE3

          OMO.#: OMO-SI7852DP-T1-GE3

          		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
          SI7852DP-T1-GE3

          Mfr.#: SI7852DP-T1-GE3

          OMO.#: OMO-SI7852DP-T1-GE3-VISHAY

          		 RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
          SI7852DP

          Mfr.#: SI7852DP

          OMO.#: OMO-SI7852DP-1190

          		 Neu und Original
          SI7852DP-T1

          Mfr.#: SI7852DP-T1

          OMO.#: OMO-SI7852DP-T1-1190

          		 MOSFET RECOMMENDED ALT 781-SI7852DP-E3
          SI7852DP-T1-E3

          Mfr.#: SI7852DP-T1-E3

          OMO.#: OMO-SI7852DP-T1-E3-VISHAY

          		 MOSFET N-CH 80V 7.6A PPAK SO-8
          SI7852DP-T1-E3.

          Mfr.#: SI7852DP-T1-E3.

          OMO.#: OMO-SI7852DP-T1-E3--1190

          		 Neu und Original
          SI7852DP-TI-E3

          Mfr.#: SI7852DP-TI-E3

          OMO.#: OMO-SI7852DP-TI-E3-1190

          		 Neu und Original
          SI7852DPT1

          Mfr.#: SI7852DPT1

          OMO.#: OMO-SI7852DPT1-1190

          		 Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          2000
          Menge eingeben:
          Der aktuelle Preis von SI7852DP-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          1,55 $
          1,55 $
          10
          1,47 $
          14,72 $
          100
          1,40 $
          139,50 $
          500
          1,32 $
          658,75 $
          1000
          1,24 $
          1 240,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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