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SI7852DP-T1-GE3

SI7852DP-T1-GE3
Mfr. #:
SI7852DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7852DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI7852DP-GE3
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Paket-Koffer
SO-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
1.9 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
31 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
7.6 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Rds-On-Drain-Source-Widerstand
16.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
40 ns
Typische-Einschaltverzögerungszeit
17 ns
Kanal-Modus
Erweiterung
Tags
SI7852DP-T1, SI7852DP-T, SI7852D, SI7852, SI785, SI78, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R
***ark
N CHANNEL MOSFET, 80V, 7.6A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.5508
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.6814
  • 500:$1.9936
  • 100:$2.4620
  • 10:$3.0020
  • 1:$3.3600
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.6814
  • 500:$1.9936
  • 100:$2.4620
  • 10:$3.0020
  • 1:$3.3600
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R (Alt: SI7852DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7852DP-T1-GE3
    DISTI # SI7852DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7852DP-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$1.2189
    • 6000:$1.1829
    • 12000:$1.1349
    • 18000:$1.1029
    • 30000:$1.0739
    SI7852DP-T1-GE3
    DISTI # 84R8079    		Vishay IntertechnologiesN CHANNEL MOSFET, 80V, 7.6A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
    • 1:$3.0600
    • 25:$2.5400
    • 50:$2.2600
    • 100:$1.9700
    • 250:$1.8500
    • 500:$1.7300
    • 1000:$1.6500
    SI7852DP-T1-GE3
    DISTI # 15R5226    		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.9W RoHS Compliant: Yes0
    • 1:$1.6700
    • 2000:$1.5900
    • 4000:$1.4900
    • 8000:$1.3800
    • 12000:$1.3300
    • 20000:$1.3100
    SI7852DP-T1-GE3
    DISTI # 781-SI7852DP-GE3    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		0
    • 1:$3.0600
    • 10:$2.5400
    • 100:$1.9700
    • 500:$1.7300
    • 1000:$1.6500
    • 3000:$1.6400
    SI7852DP-T1-GE3
    DISTI # 2283668    		Vishay IntertechnologiesMOSFET, N-CH, 80V, PPAK-SO8
    RoHS: Compliant    		0
    • 1:$4.8500
    • 10:$4.0300
    • 100:$3.1200
    • 500:$2.7500
    • 1000:$2.6200
    • 3000:$2.6000
    SI7852DP-T1-GE3
    DISTI # 2283668    		Vishay IntertechnologiesMOSFET, N-CH, 80V, PPAK-SO8
    RoHS: Compliant    		0
    • 1:£2.6600
    • 10:£1.9600
    • 100:£1.5100
    • 250:£1.4200
    • 500:£1.3300
    SI7852DP-T1-GE3Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8Americas -
      Bild Teil # Beschreibung
      SI7852DP-T1-E3

      Mfr.#: SI7852DP-T1-E3

      OMO.#: OMO-SI7852DP-T1-E3

      		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
      SI7852DP-T1-GE3

      Mfr.#: SI7852DP-T1-GE3

      OMO.#: OMO-SI7852DP-T1-GE3

      		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
      SI7852DP-T1-GE3

      Mfr.#: SI7852DP-T1-GE3

      OMO.#: OMO-SI7852DP-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
      SI7852DP

      Mfr.#: SI7852DP

      OMO.#: OMO-SI7852DP-1190

      		 Neu und Original
      SI7852DP-T1

      Mfr.#: SI7852DP-T1

      OMO.#: OMO-SI7852DP-T1-1190

      		 MOSFET RECOMMENDED ALT 781-SI7852DP-E3
      SI7852DP-T1-E3

      Mfr.#: SI7852DP-T1-E3

      OMO.#: OMO-SI7852DP-T1-E3-VISHAY

      		 MOSFET N-CH 80V 7.6A PPAK SO-8
      SI7852DP-T1-E3.

      Mfr.#: SI7852DP-T1-E3.

      OMO.#: OMO-SI7852DP-T1-E3--1190

      		 Neu und Original
      SI7852DP-TI-E3

      Mfr.#: SI7852DP-TI-E3

      OMO.#: OMO-SI7852DP-TI-E3-1190

      		 Neu und Original
      SI7852DPT1

      Mfr.#: SI7852DPT1

      OMO.#: OMO-SI7852DPT1-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von SI7852DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,61 $
      1,61 $
      10
      1,53 $
      15,30 $
      100
      1,45 $
      144,98 $
      500
      1,37 $
      684,60 $
      1000
      1,29 $
      1 288,70 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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